Inventor
LIN TZU-CHING
TW26 patents
⚠️ This page may combine multiple inventors who share the name “LIN TZU-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
25 patentsUS10510607B1Dec 17, 2019
Semiconductor device convex source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9905641B2Feb 27, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10453943B2Oct 22, 2019
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US10038095B2Jul 31, 2018
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11355641B2Jun 7, 2022
Merged source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10950730B2Mar 16, 2021
Merged source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10867861B2Dec 15, 2020
Fin field-effect transistor device and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10468482B2Nov 5, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11823949B2Nov 21, 2023
FinFet with source/drain regions comprising an insulator layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11600715B2Mar 7, 2023
FETs and methods of forming FETs
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11205713B2Dec 21, 2021
FinFET having a non-faceted top surface portion for a source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11004725B2May 11, 2021
Method of forming a FinFET device with gaps in the source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12469744B2Nov 11, 2025
Method for forming FinFET with source/drain regions comprising an insulator layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402344B2Aug 26, 2025
FETS and methods of forming FETS
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243784B2Mar 4, 2025
Silicon phosphide semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11961912B2Apr 16, 2024
Merged source/drain features
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749567B2Sep 5, 2023
Silicon phosphide semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127637B2Sep 21, 2021
Semiconductor device convex source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121255B2Sep 14, 2021
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069578B2Jul 20, 2021
Method of manufacturing a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004745B2May 11, 2021
Semiconductor device convex source/drain region
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991795B2Apr 27, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991630B2Apr 27, 2021
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10763366B2Sep 1, 2020
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651309B2May 12, 2020
V-shape recess profile for embedded source/drain epitaxy
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51