P

Inventor

LIN TZU-CHING

TW26 patents
⚠️ This page may combine multiple inventors who share the name “LIN TZU-CHING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

25 patents
US10510607B1Dec 17, 2019

Semiconductor device convex source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9905641B2Feb 27, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10453943B2Oct 22, 2019

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US10038095B2Jul 31, 2018

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations83
US11355641B2Jun 7, 2022

Merged source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10950730B2Mar 16, 2021

Merged source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10867861B2Dec 15, 2020

Fin field-effect transistor device and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10468482B2Nov 5, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11823949B2Nov 21, 2023

FinFet with source/drain regions comprising an insulator layer

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11600715B2Mar 7, 2023

FETs and methods of forming FETs

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11205713B2Dec 21, 2021

FinFET having a non-faceted top surface portion for a source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11004725B2May 11, 2021

Method of forming a FinFET device with gaps in the source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12469744B2Nov 11, 2025

Method for forming FinFET with source/drain regions comprising an insulator layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12402344B2Aug 26, 2025

FETS and methods of forming FETS

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243784B2Mar 4, 2025

Silicon phosphide semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11961912B2Apr 16, 2024

Merged source/drain features

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749567B2Sep 5, 2023

Silicon phosphide semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11127637B2Sep 21, 2021

Semiconductor device convex source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121255B2Sep 14, 2021

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069578B2Jul 20, 2021

Method of manufacturing a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11004745B2May 11, 2021

Semiconductor device convex source/drain region

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991795B2Apr 27, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10991630B2Apr 27, 2021

Semiconductor device and method

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10763366B2Sep 1, 2020

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10651309B2May 12, 2020

V-shape recess profile for embedded source/drain epitaxy

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

HUANG BORH-RAN

1 patent