Inventor

SUNG FU-TING

TW63 patents

⚠️ This page may combine multiple inventors who share the name “SUNG FU-TING”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SUNG FU-TING

TAIWAN SEMICONDUCTOR MFG CO LTD

RRAM device

RRAM cell with bottom electrode

Semiconductor structure, electrode structure and method of forming the same

RRAM cell with bottom electrode

Semiconductor structure and method of manufacturing the same

Reversed stack MTJ

Reversed stack MTJ

Storage device with composite spacer and method for manufacturing the same

Resistance variable memory structure and method of forming the same

Memory cell having resistance variable film and method of making the same

Memory cell having resistance variable film and method of making the same

Storage device with composite spacer and method for manufacturing the same

Reversed stack MTJ

Memory device with composite spacer

Semiconductor structure, electrode structure and method of forming the same

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Device with composite spacer and method for manufacturing the same

Method for manufacturing resistive random access memory structure

Semiconductor structure and method of manufacturing the same

Memory cell having resistance variable film and method of making the same

Semiconductor structure, electrode structure and method of forming the same

RRAM devices and methods

Flash memory structure

Memory device with composite spacer

Semiconductor structure, electrode structure and method of forming the same

Integrated circuit device

Semiconductor structure, electrode structure and method of forming the same

Memory cell having resistance variable film and method of making the same

Resistance variable memory structure and method of forming the same

Resistive random access memory structure

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Method for forming semiconductor structure

Memory device, memory integrated circuit and manufacturing method thereof

Method for fabricating integrated circuit device

Trench formation scheme for programmable metallization cell to prevent metal redeposit

Semiconductor structure and method of manufacturing the same

Semiconductor structure and method for forming the same

Memory device, memory integrated circuit and manufacturing method thereof

Semiconductor structure and method of manufacturing the same

Reversed stack MTJ

In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same

Resistive memory device including a silicon oxide base spacer and methods for forming the same

TAIWAN SEMICONDUCTOR MFG

RRAM structure and process using composite spacer

Resistance variable memory structure and method of forming the same

MRAM device and fabrication method thereof

MRAM device and fabrication method thereof

MRAM device and fabrication method thereof

Hole first hardmask definition

HUANG WEI-HANG

Hole first hardmask definition

Hole first hardmask definition