Inventor

CHANG H J

TW2 patents

Patents

2 patents

US5883393AMar 16, 1999

Source inner shield for eaton NV-10 high current implanter

TAIWAN SEMICONDUCTOR MFG15 citations68

US5763895AJun 9, 1998

Source inner shield for eaton NV-10 high current implanter

TAIWAN SEMICONDUCTOR MFG8 citations68