Inventor

TING SHYH-FANN

TW104 patents

⚠️ This page may combine multiple inventors who share the name “TING SHYH-FANN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TING SHYH-FANN

TAIWAN SEMICONDUCTOR MFG CO LTD

Composite grid structure to reduce cross talk in back side illumination image sensors

Pad structure for front side illuminated image sensor

Extra doped region for back-side deep trench isolation

Image sensor comprising reflective guide layer and method of forming the same

Image sensor having improved full well capacity and related method of formation

Extra doped region for back-side deep trench isolation

Image sensor comprising reflective guide layer and method of forming the same

Stacked SPAD image sensor

Extra doped region for back-side deep trench isolation

Deep trench isolation fabrication for BSI image sensor

Backside illuminated image sensor with negatively charged layer

Composite grid structure to reduce crosstalk in back side illumination image sensors

3DIC structure and method for hybrid bonding semiconductor wafers

Image sensor having improved full well capacity and related method of formation

Method for manufacturing semiconductor image sensor device having deep trench isolation

Vertical gate field effect transistor

Metal reflector grounding for noise reduction in light detector

Image sensor having improved full well capacity and related method of formation

Pad structure for front side illuminated image sensor

Semiconductor image sensor device with deep trench isolations and method for manufacturing the same

Extra doped region for back-side deep trench isolation

Method for forming alignment marks and structure of same

Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processes

Mechanisms for forming image sensor device

Back-side illuminated (BSI) image sensor with global shutter scheme

Isolation structure to increase image sensor performance

Extra doped region for back-side deep trench isolation

Semiconductor structure

Extra doped region for back-side deep trench isolation

Metal reflector grounding for noise reduction in light detector

Backside illuminated image sensor with negatively charged layer

Method for forming image sensor device structure with doping layer in light-sensing region

Method for forming alignment marks and structure of same

Image sensor comprising reflective guide layer and method of forming the same

UNITED MICROELECTRONICS CORP

Semiconductor structure and fabricating method thereof

Semiconductor MOS transistor device and method for making the same

Fabricating method of semiconductor structure

Method for forming MOS transistor

Method of manufacturing complementary metal oxide semiconductor transistors

Semiconductor structure and fabrication thereof

Method for fabricating strained-silicon CMOS transistors

Metal oxide semiconductor transistor

Method for fabricating a semiconductor device having improved hot carrier immunity ability

HUNG WEN-HAN

Transistor structure

Method of fabricating transistors and a transistor structure for improving short channel effect and drain induced barrier lowering

NAT SCIENCE COUNCIL

Contact type micro piezoresistive shear-stress sensor

UNIV NAT CHENG KUNG

Method of growing single crystal Gallium Nitride on silicon substrate

TAIWAN SEMICONDUCTOR MFG

Multiple metal film stack in BSI chips

TING SHYH-FANN

Multiple metal film stack in BSI chips

TSENG CHU-YIN

Method of fabricating metal oxide semiconductor transistor