Inventor
CHEN NENG-KUO
TW77 patents
⚠️ This page may combine multiple inventors who share the name “CHEN NENG-KUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS9443769B2Sep 13, 2016
Wrap-around contact
TAIWAN SEMICONDUCTOR MFG CO LTD534 citations99
US10651091B2May 12, 2020
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations84
US10269649B2Apr 23, 2019
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9941367B2Apr 10, 2018
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9994736B2Jun 12, 2018
Slurry composition for chemical mechanical polishing of GE-based materials and devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations83
US9530655B2Dec 27, 2016
Slurry composition for chemical mechanical polishing of Ge-based materials and devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations83
US9416297B2Aug 16, 2016
Chemical mechanical polishing method using slurry composition containing N-oxide compound
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US10333001B2Jun 25, 2019
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US9870956B2Jan 16, 2018
FinFETs with nitride liners and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9812551B2Nov 7, 2017
Method of forming the gate electrode of field effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9337103B2May 10, 2016
Method for removing hard mask oxide and making gate structure of semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11784183B2Oct 10, 2023
Inter-level connection for multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11532612B2Dec 20, 2022
Inter-level connection for multi-layer structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US9929272B2Mar 27, 2018
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9443964B2Sep 13, 2016
Fin structure of FinFet
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11854898B2Dec 26, 2023
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11362000B2Jun 14, 2022
Wrap-around contact on FinFET
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11193043B2Dec 7, 2021
System for chemical mechanical polishing of Ge-based materials and devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
UNITED MICROELECTRONICS CORP
11 patentsUS7485515B2Feb 3, 2009
Method of manufacturing metal oxide semiconductor
UNITED MICROELECTRONICS CORP8 citations84
US7238586B2Jul 3, 2007
Seamless trench fill method utilizing sub-atmospheric pressure chemical vapor deposition technique
UNITED MICROELECTRONICS CORP16 citations83
US7777284B2Aug 17, 2010
Metal-oxide-semiconductor transistor and method of forming the same
UNITED MICROELECTRONICS CORP6 citations74
US6913978B1Jul 5, 2005
Method for forming shallow trench isolation structure
UNITED MICROELECTRONICS CORP9 citations71
US7662730B2Feb 16, 2010
Method for fabricating ultra-high tensile-stressed film and strained-silicon transistors thereof
UNITED MICROELECTRONICS CORP4 citations63
US7585790B2Sep 8, 2009
Method for forming semiconductor device
UNITED MICROELECTRONICS CORP2 citations63
US7566668B2Jul 28, 2009
Method of forming contact
UNITED MICROELECTRONICS CORP3 citations63
US7642166B2Jan 5, 2010
Method of forming metal-oxide-semiconductor transistors
UNITED MICROELECTRONICS CORP3 citations62
US7541298B2Jun 2, 2009
STI of a semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations62
US7494878B2Feb 24, 2009
Metal-oxide-semiconductor transistor and method of forming the same
UNITED MICROELECTRONICS CORP4 citations62
US7588883B2Sep 15, 2009
Method for forming a gate and etching a conductive layer
UNITED MICROELECTRONICS CORP4 citations61
TAIWAN SEMICONDUCTOR MFG
9 patentsUS9093530B2Jul 28, 2015
Fin structure of FinFET
TAIWAN SEMICONDUCTOR MFG1,300 citations99
US7655532B1Feb 2, 2010
STI film property using SOD post-treatment
TAIWAN SEMICONDUCTOR MFG54 citations98
US8367534B2Feb 5, 2013
Non-uniformity reduction in semiconductor planarization
TAIWAN SEMICONDUCTOR MFG16 citations93
US8048813B2Nov 1, 2011
Method of reducing delamination in the fabrication of small-pitch devices
TAIWAN SEMICONDUCTOR MFG20 citations93
US9214556B2Dec 15, 2015
Self-aligned dual-metal silicide and germanide formation
TAIWAN SEMICONDUCTOR MFG23 citations92
US8921136B2Dec 30, 2014
Self aligned contact formation
TAIWAN SEMICONDUCTOR MFG7 citations84
US9034716B2May 19, 2015
Method of making a FinFET device
TAIWAN SEMICONDUCTOR MFG3 citations63
US8524587B2Sep 3, 2013
Non-uniformity reduction in semiconductor planarization
TAIWAN SEMICONDUCTOR MFG2 citations63
US7892929B2Feb 22, 2011
Shallow trench isolation corner rounding
TAIWAN SEMICONDUCTOR MFG5 citations63
CHEN NENG-KUO
6 patentsUS8319311B2Nov 27, 2012
Hybrid STI gap-filling approach
CHEN NENG-KUO33 citations92
US9589803B2Mar 7, 2017
Gate electrode of field effect transistor
CHEN NENG-KUO4 citations84
US9245792B2Jan 26, 2016
Method for forming interconnect structures
CHEN NENG-KUO14 citations84
US8187948B2May 29, 2012
Hybrid gap-fill approach for STI formation
CHEN NENG-KUO7 citations83
US9159808B2Oct 13, 2015
Selective etch-back process for semiconductor devices
CHEN NENG-KUO2 citations62
US8546242B2Oct 1, 2013
Hybrid gap-fill approach for STI formation
CHEN NENG-KUO3 citations62
HUANG GIN-CHEN
2 patentsLAI CHIH-YU
1 patentCHANG CHUN-WEI
1 patentWINBOND ELECTRONICS CORP
1 patentUNITED MICROELECTRIC CORP
1 patentShowing the top 50 of 77 patents by PatentIndex Score.