P

Inventor

CHAO ROBIN HSIN KUO

US29 patents
⚠️ This page may combine multiple inventors who share the name “CHAO ROBIN HSIN KUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

28 patents
US9831324B1Nov 28, 2017

Self-aligned inner-spacer replacement process using implantation

IBM14 citations92
US10903315B2Jan 26, 2021

Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection

IBM12 citations86
US10431651B1Oct 1, 2019

Nanosheet transistor with robust source/drain isolation from substrate

IBM12 citations84
US11079337B1Aug 3, 2021

Secure wafer inspection and identification

IBM3 citations73
US10756178B2Aug 25, 2020

Self-limiting and confining epitaxial nucleation

IBM1 citations73
US10741639B2Aug 11, 2020

Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection

IBM3 citations73
US10692203B2Jun 23, 2020

Measuring defectivity by equipping model-less scatterometry with cognitive machine learning

IBM3 citations73
US10658459B2May 19, 2020

Nanosheet transistor with robust source/drain isolation from substrate

IBM3 citations73
US10636694B2Apr 28, 2020

Dielectric isolation in gate-all-around devices

IBM3 citations73
US10475905B2Nov 12, 2019

Techniques for vertical FET gate length control

IBM4 citations73
US10453736B2Oct 22, 2019

Dielectric isolation in gate-all-around devices

IBM3 citations73
US10340341B1Jul 2, 2019

Self-limiting and confining epitaxial nucleation

IBM1 citations73
US10374034B1Aug 6, 2019

Undercut control in isotropic wet etch processes

IBM5 citations72
US11199505B2Dec 14, 2021

Machine learning enhanced optical-based screening for in-line wafer testing

IBM2 citations70
US11568101B2Jan 31, 2023

Predictive multi-stage modelling for complex process control

IBM2 citations69
US12046680B2Jul 23, 2024

Inner spacer formation for nanosheet transistors

IBM0 citations62
US11990530B2May 21, 2024

Replacement-channel fabrication of III-V nanosheet devices

IBM0 citations62
US11842998B2Dec 12, 2023

Semiconductor device and method of forming the semiconductor device

IBM0 citations62
US11742409B2Aug 29, 2023

Replacement-channel fabrication of III-V nanosheet devices

IBM0 citations62
US11081567B2Aug 3, 2021

Replacement-channel fabrication of III-V nanosheet devices

IBM0 citations62
US10985273B2Apr 20, 2021

Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile

IBM0 citations62
US10529850B2Jan 7, 2020

Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile

IBM1 citations62
US10355103B2Jul 16, 2019

Long channels for transistors

IBM1 citations62
US10756177B2Aug 25, 2020

Self-limiting and confining epitaxial nucleation

IBM0 citations52
US10411120B2Sep 10, 2019

Self-aligned inner-spacer replacement process using implantation

IBM0 citations52
US10312326B1Jun 4, 2019

Long channels for transistors

IBM0 citations52
US10276695B2Apr 30, 2019

Self-aligned inner-spacer replacement process using implantation

IBM0 citations52
US10955359B2Mar 23, 2021

Method for quantification of process non uniformity using model-based metrology

IBM0 citations50

ELPIS TECH INC

1 patent