Inventor
CHAO ROBIN HSIN KUO
US29 patents
⚠️ This page may combine multiple inventors who share the name “CHAO ROBIN HSIN KUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
28 patentsUS9831324B1Nov 28, 2017
Self-aligned inner-spacer replacement process using implantation
IBM14 citations92
US10903315B2Jan 26, 2021
Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection
IBM12 citations86
US10431651B1Oct 1, 2019
Nanosheet transistor with robust source/drain isolation from substrate
IBM12 citations84
US11079337B1Aug 3, 2021
Secure wafer inspection and identification
IBM3 citations73
US10756178B2Aug 25, 2020
Self-limiting and confining epitaxial nucleation
IBM1 citations73
US10741639B2Aug 11, 2020
Formation of dielectric layer as etch-stop for source and drain epitaxy disconnection
IBM3 citations73
US10692203B2Jun 23, 2020
Measuring defectivity by equipping model-less scatterometry with cognitive machine learning
IBM3 citations73
US10658459B2May 19, 2020
Nanosheet transistor with robust source/drain isolation from substrate
IBM3 citations73
US10636694B2Apr 28, 2020
Dielectric isolation in gate-all-around devices
IBM3 citations73
US10475905B2Nov 12, 2019
Techniques for vertical FET gate length control
IBM4 citations73
US10453736B2Oct 22, 2019
Dielectric isolation in gate-all-around devices
IBM3 citations73
US10340341B1Jul 2, 2019
Self-limiting and confining epitaxial nucleation
IBM1 citations73
US10374034B1Aug 6, 2019
Undercut control in isotropic wet etch processes
IBM5 citations72
US11199505B2Dec 14, 2021
Machine learning enhanced optical-based screening for in-line wafer testing
IBM2 citations70
US11568101B2Jan 31, 2023
Predictive multi-stage modelling for complex process control
IBM2 citations69
US12046680B2Jul 23, 2024
Inner spacer formation for nanosheet transistors
IBM0 citations62
US11990530B2May 21, 2024
Replacement-channel fabrication of III-V nanosheet devices
IBM0 citations62
US11842998B2Dec 12, 2023
Semiconductor device and method of forming the semiconductor device
IBM0 citations62
US11742409B2Aug 29, 2023
Replacement-channel fabrication of III-V nanosheet devices
IBM0 citations62
US11081567B2Aug 3, 2021
Replacement-channel fabrication of III-V nanosheet devices
IBM0 citations62
US10985273B2Apr 20, 2021
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile
IBM0 citations62
US10529850B2Jan 7, 2020
Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile
IBM1 citations62
US10355103B2Jul 16, 2019
Long channels for transistors
IBM1 citations62
US10756177B2Aug 25, 2020
Self-limiting and confining epitaxial nucleation
IBM0 citations52
US10411120B2Sep 10, 2019
Self-aligned inner-spacer replacement process using implantation
IBM0 citations52
US10312326B1Jun 4, 2019
Long channels for transistors
IBM0 citations52
US10276695B2Apr 30, 2019
Self-aligned inner-spacer replacement process using implantation
IBM0 citations52
US10955359B2Mar 23, 2021
Method for quantification of process non uniformity using model-based metrology
IBM0 citations50