Inventor

Yeung Chun Wing

US41 patents

⚠️ This page may combine multiple inventors who share the name “Yeung Chun Wing”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

Yeung Chun Wing

IBM

Structure and method to form nanosheet devices with bottom isolation

Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor

Vertically stacked transistors

Vertically stacked transistors

Nanosheet FET including all-around source/drain contact

Replacement metal gate processes for vertical transport field-effect transistor

Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity

Preventing strained fin relaxation

Preventing strained fin relaxation by sealing fin ends

Semiconductor device and method of forming the semiconductor device

Stacked upper fin and lower fin transistor with separate gate

Nanosheet FET including encapsulated all-around source/drain contact

Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact

Double gate two-dimensional material transistor

Replacement metal gate processes for vertical transport field-effect transistor

Vertical tunnel FET with self-aligned heterojunction

Preventing strained fin relaxation

Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistor

Techniques for vertical FET gate length control

Maskless epitaxial growth of phosphorus-doped Si and boron-doped SiGe (Ge) for advanced source/drain contact

Techniques for forming different gate length vertical transistors with dual gate oxide

Undercut control in isotropic wet etch processes

Semiconductor device and method of forming the semiconductor device

Replacement-channel fabrication of III-V nanosheet devices

Semiconductor device and method of forming the semiconductor device

Replacement-channel fabrication of III-V nanosheet devices

Self-aligned two-dimensional material transistors

Replacement-channel fabrication of III-V nanosheet devices

Self-aligned two-dimensional material transistors

Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile

Approach to high-k dielectric feature uniformity

Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profile

Long channels for transistors

Measurement of top contact resistance in vertical field-effect transistor devices

Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly

Approach to high-k dielectric feature uniformity

Increased source and drain contact edge width in two-dimensional material field effect transistors by directed self-assembly

Long channels for transistors

GLOBALFOUNDRIES INC

Methods, apparatus and system for providing adjustable fin height for a FinFET device

ELPIS TECH INC

Techniques for vertical FET gate length control

TAIWAN SEMICONDUCTOR MFG CO LTD

Semiconductor device structure including forksheet transistors and methods of forming the same