Inventor
CARTER RICHARD
GB45 patents
⚠️ This page may combine multiple inventors who share the name “CARTER RICHARD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
JAGUAR LAND ROVER LTD
12 patentsUSD803109SNov 21, 2017
Automobile grille
JAGUAR LAND ROVER LTD38 citations94
USD797325SSep 12, 2017
Tail lamp
JAGUAR LAND ROVER LTD9 citations92
USD786150SMay 9, 2017
Automobile front bumper
JAGUAR LAND ROVER LTD14 citations92
USD748033SJan 26, 2016
Wheel
JAGUAR LAND ROVER LTD20 citations92
USD746211SDec 29, 2015
Wheel
JAGUAR LAND ROVER LTD19 citations92
USD1003064SOct 31, 2023
Vehicle row seats
JAGUAR LAND ROVER LTD11 citations86
USD1008143SDec 19, 2023
Vehicle side door
JAGUAR LAND ROVER LTD9 citations85
USD966163SOct 11, 2022
Vehicle side door
JAGUAR LAND ROVER LTD8 citations85
USD861931SOct 1, 2019
Tail lamp
JAGUAR LAND ROVER LTD4 citations84
USD849611SMay 28, 2019
Automobile grille portion
JAGUAR LAND ROVER LTD7 citations84
USD810640SFeb 20, 2018
Grille badge for a vehicle
JAGUAR LAND ROVER LTD2 citations73
USD966979SOct 18, 2022
Vehicle side door
JAGUAR LAND ROVER LTD4 citations72
GLOBALFOUNDRIES INC
8 patentsUS8742510B2Jun 3, 2014
Semiconductor devices with replacement gate structures having conductive contacts positioned therebetween
GLOBALFOUNDRIES INC6 citations84
US8367495B2Feb 5, 2013
Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material
GLOBALFOUNDRIES INC8 citations84
US8357978B1Jan 22, 2013
Methods of forming semiconductor devices with replacement gate structures
GLOBALFOUNDRIES INC9 citations84
US8378432B2Feb 19, 2013
Maintaining integrity of a high-K gate stack by an offset spacer used to determine an offset of a strain-inducing semiconductor alloy
GLOBALFOUNDRIES INC5 citations73
US8872285B2Oct 28, 2014
Metal gate structure for semiconductor devices
GLOBALFOUNDRIES INC3 citations62
US8343837B2Jan 1, 2013
Work function adjustment in a high-k gate electrode structure after transistor fabrication by using lanthanum
GLOBALFOUNDRIES INC4 citations62
US8048748B2Nov 1, 2011
Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device
GLOBALFOUNDRIES INC2 citations60
US9123568B2Sep 1, 2015
Encapsulation of closely spaced gate electrode structures
GLOBALFOUNDRIES INC0 citations52
CARTER RICHARD
6 patentsUS5211792AMay 18, 1993
Method of laminating multiple layers
CARTER RICHARD34 citations92
US8653605B2Feb 18, 2014
Work function adjustment in a high-K gate electrode structure after transistor fabrication by using lanthanum
CARTER RICHARD6 citations83
US8198192B2Jun 12, 2012
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
CARTER RICHARD6 citations83
US8445344B2May 21, 2013
Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning
CARTER RICHARD17 citations82
US8932709B2Jan 13, 2015
Ground cover for containment barriers
CARTER RICHARD3 citations62
US8525289B2Sep 3, 2013
Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization
CARTER RICHARD2 citations62
BAARS PETER
3 patentsUS8846513B2Sep 30, 2014
Semiconductor device comprising replacement gate electrode structures and self-aligned contact elements formed by a late contact fill
BAARS PETER6 citations73
US8647952B2Feb 11, 2014
Encapsulation of closely spaced gate electrode structures
BAARS PETER4 citations73
US8835245B2Sep 16, 2014
Semiconductor device comprising self-aligned contact elements
BAARS PETER1 citations52
KRONHOLZ STEPHAN
3 patentsUS8173501B2May 8, 2012
Reduced STI topography in high-K metal gate transistors by using a mask after channel semiconductor alloy deposition
KRONHOLZ STEPHAN3 citations63
US8486786B2Jul 16, 2013
Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process
KRONHOLZ STEPHAN4 citations62
US8513080B2Aug 20, 2013
Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device
KRONHOLZ STEPHAN2 citations57