Inventor

NAKATANI YOSHINOBU

JP6 patents

⚠️ This page may combine multiple inventors who share the name “NAKATANI YOSHINOBU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

2 patents

US7630231B2Dec 8, 2009

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

INFINEON TECHNOLOGIES AG11 citations81

US7315467B2Jan 1, 2008

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

INFINEON TECHNOLOGIES AG0 citations47

UNIV KYOTO

2 patents

US7952915B2May 31, 2011

Core-rotating element of ferromagnetic dot and information memory element using the core of ferromagnetic dot

UNIV KYOTO5 citations58

US8345473B2Jan 1, 2013

Ferromagnetic thin wire element

UNIV KYOTO0 citations48

ALTIS SEMICONDUCTOR SNC

1 patent

US7061797B1Jun 13, 2006

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

ALTIS SEMICONDUCTOR SNC14 citations79

SAMSUNG ELECTRONICS CO LTD

1 patent

US10840435B2Nov 17, 2020

Magnetic tunnel junction device and magnetic resistance memory device

SAMSUNG ELECTRONICS CO LTD4 citations71