P

Inventor

OBRADOVIC BORNA

US24 patents
⚠️ This page may combine multiple inventors who share the name “OBRADOVIC BORNA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

11 patents
US9287357B2Mar 15, 2016

Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD66 citations97
US9853114B1Dec 26, 2017

Field effect transistor with stacked nanowire-like channels and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD24 citations94
US9647098B2May 9, 2017

Thermionically-overdriven tunnel FETs and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD42 citations93
US9466669B2Oct 11, 2016

Multiple channel length finFETs with same physical gate length

SAMSUNG ELECTRONICS CO LTD16 citations84
US9960232B2May 1, 2018

Horizontal nanosheet FETs and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD7 citations83
US9653287B2May 16, 2017

S/D connection to individual channel layers in a nanosheet FET

SAMSUNG ELECTRONICS CO LTD11 citations81
US9805795B2Oct 31, 2017

Zero leakage, high noise margin coupled giant spin hall based retention latch

SAMSUNG ELECTRONICS CO LTD2 citations73
US9899529B2Feb 20, 2018

Method to make self-aligned vertical field effect transistor

SAMSUNG ELECTRONICS CO LTD5 citations72
US9870940B2Jan 16, 2018

Methods of forming nanosheets on lattice mismatched substrates

SAMSUNG ELECTRONICS CO LTD5 citations72
US10181527B2Jan 15, 2019

FinFet having dual vertical spacer and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations62
US9773904B2Sep 26, 2017

Vertical field effect transistor with biaxial stressor layer

SAMSUNG ELECTRONICS CO LTD0 citations47

TEXAS INSTRUMENTS INC

8 patents

INTEL CORP

2 patents

EKBOTE SHASHANK SURESHCHANDRA

1 patent

OBRADOVIC BORNA

1 patent

EKBOTE SHASHANK

1 patent