Inventor
VISOKAY MARK
US30 patents
⚠️ This page may combine multiple inventors who share the name “VISOKAY MARK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
14 patentsUS6936508B2Aug 30, 2005
Metal gate MOS transistors and methods for making the same
TEXAS INSTRUMENTS INC173 citations99
US6750126B1Jun 15, 2004
Methods for sputter deposition of high-k dielectric films
TEXAS INSTRUMENTS INC83 citations98
US6211035B1Apr 3, 2001
Integrated circuit and method
TEXAS INSTRUMENTS INC370 citations98
US7148546B2Dec 12, 2006
MOS transistor gates with doped silicide and methods for making the same
TEXAS INSTRUMENTS INC44 citations96
US6444542B2Sep 3, 2002
Integrated circuit and method
TEXAS INSTRUMENTS INC51 citations96
US6902939B2Jun 7, 2005
Integrated circuit and method
TEXAS INSTRUMENTS INC18 citations92
US6828200B2Dec 7, 2004
Multistage deposition that incorporates nitrogen via an intermediate step
TEXAS INSTRUMENTS INC8 citations74
US8962350B2Feb 24, 2015
Multi-step deposition of ferroelectric dielectric material
TEXAS INSTRUMENTS INC2 citations63
US7531400B2May 12, 2009
Methods for fabricating MOS transistor gates with doped silicide
TEXAS INSTRUMENTS INC2 citations63
US7812401B2Oct 12, 2010
MOS device and process having low resistance silicide interface using additional source/drain implant
TEXAS INSTRUMENTS INC3 citations62
US7682892B2Mar 23, 2010
MOS device and process having low resistance silicide interface using additional source/drain implant
TEXAS INSTRUMENTS INC3 citations62
US7361599B2Apr 22, 2008
Integrated circuit and method
TEXAS INSTRUMENTS INC6 citations62
US7071519B2Jul 4, 2006
Control of high-k gate dielectric film composition profile for property optimization
TEXAS INSTRUMENTS INC0 citations52
US7276408B2Oct 2, 2007
Reduction of dopant loss in a gate structure
TEXAS INSTRUMENTS INC1 citations51
MICRON TECHNOLOGY INC
14 patentsUS6518610B2Feb 11, 2003
Rhodium-rich oxygen barriers
MICRON TECHNOLOGY INC104 citations99
US6596583B2Jul 22, 2003
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC96 citations97
US6492241B1Dec 10, 2002
Integrated capacitors fabricated with conductive metal oxides
MICRON TECHNOLOGY INC64 citations96
US6869877B2Mar 22, 2005
Integrated capacitors fabricated with conductive metal oxides
MICRON TECHNOLOGY INC17 citations92
US6833576B2Dec 21, 2004
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers
MICRON TECHNOLOGY INC20 citations92
US6482736B1Nov 19, 2002
Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
MICRON TECHNOLOGY INC30 citations92
US7038263B2May 2, 2006
Integrated circuits with rhodium-rich structures
MICRON TECHNOLOGY INC4 citations74
US6781175B2Aug 24, 2004
Rhodium-rich integrated circuit capacitor electrode
MICRON TECHNOLOGY INC6 citations74
US6740554B2May 25, 2004
Methods to form rhodium-rich oxygen barriers
MICRON TECHNOLOGY INC5 citations74
US6940112B2Sep 6, 2005
Integrated capacitors fabricated with conductive metal oxides
MICRON TECHNOLOGY INC9 citations73
US7253102B2Aug 7, 2007
Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
MICRON TECHNOLOGY INC3 citations63
US7037730B2May 2, 2006
Capacitor with high dielectric constant materials and method of making
MICRON TECHNOLOGY INC4 citations63
US6812112B2Nov 2, 2004
Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
MICRON TECHNOLOGY INC3 citations63
US6764943B2Jul 20, 2004
Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers
MICRON TECHNOLOGY INC2 citations63