Inventor
WU FU-AN
TW44 patents
⚠️ This page may combine multiple inventors who share the name “WU FU-AN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
35 patentsUS10503421B2Dec 10, 2019
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10340897B2Jul 2, 2019
Clock generating circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9449663B2Sep 20, 2016
Circuit for memory write data operation
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations84
US9449656B2Sep 20, 2016
Memory with bit cell header transistor
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US11323101B2May 3, 2022
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11301148B2Apr 12, 2022
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10951200B2Mar 16, 2021
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10949100B2Mar 16, 2021
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10574213B2Feb 25, 2020
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10304500B2May 28, 2019
Power switch control for dual power supply
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9934828B2Apr 3, 2018
Shared sense amplifier and write driver
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12380950B2Aug 5, 2025
Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12243618B2Mar 4, 2025
Method of manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12237050B2Feb 25, 2025
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12230359B2Feb 18, 2025
Semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183428B2Dec 31, 2024
Memory circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11984164B2May 14, 2024
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11715505B2Aug 1, 2023
Memory circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11677387B2Jun 13, 2023
Clock circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11675505B2Jun 13, 2023
Configurable memory storage system
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11657873B2May 23, 2023
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11600626B2Mar 7, 2023
Semiconductor device including anti-fuse cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11468929B2Oct 11, 2022
Memory circuit and method of operating the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11417377B2Aug 16, 2022
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11107530B2Aug 31, 2021
Non-volatile static random access memory (nvSRAM) with multiple magnetic tunnel junction cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10685686B2Jun 16, 2020
Power switch control for dual power supply
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510380B2Dec 17, 2019
Power switch control for dual power supply
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276232B2Apr 30, 2019
Read margin tracking in memory applications
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9218262B2Dec 22, 2015
Dynamic memory cell replacement using column redundancy
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10777244B2Sep 15, 2020
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10176855B2Jan 8, 2019
Three-dimensional (3-D) write assist scheme for memory cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10001801B2Jun 19, 2018
Voltage providing circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9934845B2Apr 3, 2018
Latch with built-in level shifter
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9905291B2Feb 27, 2018
Circuit and method of generating a sense amplifier enable signal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
US9564193B2Feb 7, 2017
Circuit to generate a sense amplifier enable signal
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations51
TAIWAN SEMICONDUCTOR MFG
5 patentsUS9117510B2Aug 25, 2015
Circuit for memory write data operation
TAIWAN SEMICONDUCTOR MFG69 citations98
US9083342B2Jul 14, 2015
Circuit and method for power management
TAIWAN SEMICONDUCTOR MFG4 citations73
US9104214B2Aug 11, 2015
Voltage providing circuit
TAIWAN SEMICONDUCTOR MFG3 citations62
US9275181B2Mar 1, 2016
Cell design
TAIWAN SEMICONDUCTOR MFG1 citations51
US9164522B2Oct 20, 2015
Wake up bias circuit and method of using the same
TAIWAN SEMICONDUCTOR MFG0 citations41