P

Inventor

MIAO XIANGSHUI

CN53 patents
⚠️ This page may combine multiple inventors who share the name “MIAO XIANGSHUI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNIV HUAZHONG SCIENCE TECH

44 patents
US9543510B2Jan 10, 2017

Multi-layer phase change material

UNIV HUAZHONG SCIENCE TECH4 citations72
US9473137B2Oct 18, 2016

Non-volatile boolean logic operation circuit and operation method thereof

UNIV HUAZHONG SCIENCE TECH4 citations72
US10020054B2Jul 10, 2018

Memristor-based processor integrating computing and memory and method for using the processor

UNIV HUAZHONG SCIENCE TECH2 citations69
US11609443B2Mar 21, 2023

Chalcogenide phase change material based all-optical switch and manufacturing method therefor

UNIV HUAZHONG SCIENCE TECH2 citations68
US12376314B1Jul 29, 2025

Method for threshold switch device, threshold switch device, and dynamic memory

UNIV HUAZHONG SCIENCE TECH0 citations61
US12369502B2Jul 22, 2025

Selector with superlattice-like structure and preparation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations61
US11475949B2Oct 18, 2022

Computing array based on 1T1R device, operation circuits and operating methods thereof

UNIV HUAZHONG SCIENCE TECH0 citations58
US12207574B1Jan 21, 2025

Reconfigurable heterojunction memristor, control method, fabrication method and application thereof

UNIV HUAZHONG SCIENCE TECH0 citations57
US11861489B2Jan 2, 2024

Convolutional neural network on-chip learning system based on non-volatile memory

UNIV HUAZHONG SCIENCE TECH1 citations57
US11765987B2Sep 19, 2023

Phase change memory device based on nano current channel

UNIV HUAZHONG SCIENCE TECH0 citations57
US12317765B2May 27, 2025

Method of inducing crystallization of chalcogenide phase-change material and application thereof

UNIV HUAZHONG SCIENCE TECH0 citations56
US12114583B1Oct 8, 2024

Se-based selector material, selector unit and method for preparing the same

UNIV HUAZHONG SCIENCE TECH0 citations56
US11807798B2Nov 7, 2023

Cu-doped Sb-Te system phase change material, phase change memory and preparation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations56
US11238928B2Feb 1, 2022

Read-write circuit and read-write method of memristor

UNIV HUAZHONG SCIENCE TECH0 citations53
US11200949B2Dec 14, 2021

Multiplier and operation method based on 1T1R memory

UNIV HUAZHONG SCIENCE TECH0 citations52
US11171650B2Nov 9, 2021

Reversible logic circuit and operation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations52
US11659781B2May 23, 2023

Selector device and method of making the same

UNIV HUAZHONG SCIENCE TECH0 citations51
US11437098B2Sep 6, 2022

Operating method for improving performance of selector device

UNIV HUAZHONG SCIENCE TECH0 citations51
US12412612B1Sep 9, 2025

Method for operating a dynamic memory structure having a write gating device, a read gating device, and a capacitor

UNIV HUAZHONG SCIENCE TECH0 citations50
US12249373B2Mar 11, 2025

OTS-based dynamic storage structure and operation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations50
US12057158B1Aug 6, 2024

Method for operating dynamic memory

UNIV HUAZHONG SCIENCE TECH0 citations50
US11641748B2May 2, 2023

Pretreatment method of selector device

UNIV HUAZHONG SCIENCE TECH0 citations50
US9369130B2Jun 14, 2016

Nonvolatile logic gate circuit based on phase change memory

UNIV HUAZHONG SCIENCE TECH1 citations50
US11989644B2May 21, 2024

Three-dimensional convolution operation device and method based on three-dimensional phase change memory

UNIV HUAZHONG SCIENCE TECH0 citations49
US9543955B2Jan 10, 2017

Non-volatile logic device based on phase-change magnetic materials and logic operation method thereof

UNIV HUAZHONG SCIENCE TECH1 citations49
US12293804B2May 6, 2025

Convolution operation accelerator and convolution operation method

UNIV HUAZHONG SCIENCE TECH0 citations48
US12256651B2Mar 18, 2025

With low density change, phase-change memory and preparation method therefor

UNIV HUAZHONG SCIENCE TECH0 citations47
US11830547B2Nov 28, 2023

Reduced instruction set processor based on memristor

UNIV HUAZHONG SCIENCE TECH0 citations47
US11531880B2Dec 20, 2022

Memory-based convolutional neural network system

UNIV HUAZHONG SCIENCE TECH0 citations47
US12266152B2Apr 1, 2025

Method and system of designing memristor-based naive Bayes classifier and classifier

UNIV HUAZHONG SCIENCE TECH0 citations46
US12262650B1Mar 25, 2025

Temperature sensing and computing device and array based on TaOx electronic memristor

UNIV HUAZHONG SCIENCE TECH0 citations46
US11967953B2Apr 23, 2024

Non-volatile Boolean logic circuit based on memristors and operation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations46
US11825756B2Nov 21, 2023

Preparation method of bipolar gating memristor and bipolar gating memristor

UNIV HUAZHONG SCIENCE TECH0 citations46
US12471508B1Nov 11, 2025

Phase-change electrically-controlled photonic neuron device and preparation method and application thereof

UNIV HUAZHONG SCIENCE TECH0 citations45
US12317522B2May 27, 2025

Three-dimensional 1S1C memory based on ring capacitor and preparation method

UNIV HUAZHONG SCIENCE TECH0 citations45
US12189270B2Jan 7, 2025

Y-branch type phase-change all-optical boolean logic device and all-binary logic implementation method therefor

UNIV HUAZHONG SCIENCE TECH0 citations45
US12154621B2Nov 26, 2024

Read and write circuit of three-dimensional phase-change memory

UNIV HUAZHONG SCIENCE TECH0 citations45
US11906876B2Feb 20, 2024

All-photonic Boolean logic device based on phase change straight waveguide and full binary logic implementation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations45
US11678495B2Jun 13, 2023

Three-dimensional stacked phase change memory and preparation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations45
US11233198B2Jan 25, 2022

Three-dimensional stacked memory and preparation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations45
US12395604B1Aug 19, 2025

Electrically-controllable color filter array based on phase-change material, and artificial vision system

UNIV HUAZHONG SCIENCE TECH0 citations44
US11056644B2Jul 6, 2021

Phase-change memory cell with vanadium oxide based switching layer

UNIV HUAZHONG SCIENCE TECH0 citations44
US11127901B1Sep 21, 2021

Three-dimensional stacked phase change memory and preparation method thereof

UNIV HUAZHONG SCIENCE TECH0 citations43
US12224006B2Feb 11, 2025

High-speed and large-current adjustable pulse circuit, operating circuit and operating method of phase-change memory

UNIV HUAZHONG SCIENCE TECH0 citations42

HUAWEI TECH CO LTD

3 patents

WUHAN JOULE YACHT SCIENCE & TECH CO LTD

2 patents

SHI LUPING

1 patent

Showing the top 50 of 53 patents by PatentIndex Score.