Inventor
PATERSON ALEXANDER
US30 patents
⚠️ This page may combine multiple inventors who share the name “PATERSON ALEXANDER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
APPLIED MATERIALS INC
14 patentsUS6617794B2Sep 9, 2003
Method for controlling etch uniformity
APPLIED MATERIALS INC87 citations98
US7718538B2May 18, 2010
Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
APPLIED MATERIALS INC109 citations97
US7264688B1Sep 4, 2007
Plasma reactor apparatus with independent capacitive and toroidal plasma sources
APPLIED MATERIALS INC73 citations97
US6962644B2Nov 8, 2005
Tandem etch chamber plasma processing system
APPLIED MATERIALS INC108 citations97
US6706138B2Mar 16, 2004
Adjustable dual frequency voltage dividing plasma reactor
APPLIED MATERIALS INC56 citations96
US7780864B2Aug 24, 2010
Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
APPLIED MATERIALS INC21 citations92
US7777152B2Aug 17, 2010
High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
APPLIED MATERIALS INC26 citations92
US7771606B2Aug 10, 2010
Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures
APPLIED MATERIALS INC22 citations92
US7737042B2Jun 15, 2010
Pulsed-plasma system for etching semiconductor structures
APPLIED MATERIALS INC23 citations92
US7645357B2Jan 12, 2010
Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
APPLIED MATERIALS INC40 citations92
US7674394B2Mar 9, 2010
Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distribution
APPLIED MATERIALS INC17 citations84
US7510665B2Mar 31, 2009
Plasma generation and control using dual frequency RF signals
APPLIED MATERIALS INC17 citations84
US7838430B2Nov 23, 2010
Plasma control using dual cathode frequency mixing
APPLIED MATERIALS INC8 citations83
US7727413B2Jun 1, 2010
Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
APPLIED MATERIALS INC5 citations62
LAM RES CORP
13 patentsUS9053908B2Jun 9, 2015
Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching
LAM RES CORP56 citations98
US10410836B2Sep 10, 2019
Systems and methods for tuning to reduce reflected power in multiple states
LAM RES CORP30 citations94
US10847345B2Nov 24, 2020
Direct drive RF circuit for substrate processing systems
LAM RES CORP7 citations84
US10515781B1Dec 24, 2019
Direct drive RF circuit for substrate processing systems
LAM RES CORP13 citations84
US10262867B2Apr 16, 2019
Fast-gas switching for etching
LAM RES CORP4 citations73
US10249511B2Apr 2, 2019
Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
LAM RES CORP2 citations73
US10163610B2Dec 25, 2018
Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation
LAM RES CORP3 citations72
US9275869B2Mar 1, 2016
Fast-gas switching for etching
LAM RES CORP1 citations63
US12057319B2Aug 6, 2024
Selective silicon dioxide removal using low pressure low bias deuterium plasma
LAM RES CORP0 citations62
US10651013B2May 12, 2020
Systems and methods for tuning to reduce reflected power in multiple states
LAM RES CORP0 citations52
US9640408B2May 2, 2017
Fast-gas switching for etching
LAM RES CORP0 citations52
US11538666B2Dec 27, 2022
Multi-zone cooling of plasma heated window
LAM RES CORP0 citations50
US12300463B2May 13, 2025
Method and system for automated frequency tuning of radiofrequency (RF) signal generator for multi-level RF power pulsing
LAM RES CORP0 citations45