Inventor

ZAINUDDIN ABU NASER

US21 patents

⚠️ This page may combine multiple inventors who share the name “ZAINUDDIN ABU NASER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ZAINUDDIN ABU NASER

SANDISK TECHNOLOGIES LLC

Controlling word line voltages to reduce read disturb in a memory device

Loop dependent word line ramp start time for program verify of multi-level NAND memory

NAND memory with different pass voltage ramp rates for binary and multi-state memory

Memory device with temporary kickdown of source voltage before sensing

Non-volatile memory with loop dependant ramp-up rate

Modifying program and erase parameters for single-bit memory cells to improve single-bit/multi-bit hybrid ratio

Word line dependent pass voltage ramp rate to improve performance of NAND memory

Optimized programming with a single bit per memory cell and multiple bits per memory cell

Non-volatile memory with programmable resistance non-data word line

SANDISK TECHNOLOGIES INC

Non-volatile memory with lower current program-verify

Automatic bit line voltage and bit line voltage temperature compensation adjustment for non-volatile memory apparatus current consumption reduction

Non-volatile memory with current detection circuit

Apparatus and method for selectively reducing charge pump speed during erase operations

Program verify word line ramping delay for lower current consumption mode

Separate peak current checkpoints for closed and open block read ICC countermeasures in NAND memory

Open block read ICC reduction

Suppression of peak ICC during block selection in non-volatile memories

Program pulse duration increase for NAND program failure

WESTERN DIGITAL TECH INC

Power saving during open block read with large block openness

Distributed temperature sensing scheme to suppress peak Icc in non-volatile memories

GLOBALFOUNDRIES INC

Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same