Inventor

LIN CHUN-JUNG

TW50 patents

⚠️ This page may combine multiple inventors who share the name “LIN CHUN-JUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

LIN CHUN-JUNG

MACRONIX INT CO LTD

Gate dielectric based on oxynitride grown in N2 O and annealed in NO

Method for forming nitride read only memory

Memory redundancy for high density memory

Method of performing optical proximity corrections of a photo mask pattern by using a computer

Method of fabricating mask read only memory

Method of fabricating a mask ROM with raised bit-line on each buried bit-line

Method for forming double density wordline

Method for forming cells array of mask read only memory

Method of forming a binary code of a ROM

MROM memory cell structure for storing multi level bit information

Cells array of mask read only memory

Method for forming non-volatile memory with self-aligned contact

WALTON ADVANCED ENG INC

Thinning system in package

System in package

Chip package and method of manufacturing the same

Chip package unit, method of manufacturing the same, and package structure formed by stacking the same

Multi-layer stacked chip package

Chip package with higher bearing capacity in wire bonding

Rectangular semiconductor package and a method of manufacturing the same

CHUNG SHINE

Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate

MRAM cells and circuit for programming the same

Programming MRAM cells using probability write

Raising programming current of magnetic tunnel junctions by applying P-sub bias and adjusting threshold voltage

Raising programming currents of magnetic tunnel junctions using word line overdrive and high-k metal gate

TAIWAN SEMICONDUCTOR MFG

MRAM device with continuous MTJ tunnel layers

Multi-transistor non-volatile memory element

Spin torque transfer magnetic tunnel junction structure

Method of fabricating a magnetoresistive random access structure

TAIWAN SEMICONDUCTOR MFG CO LTD

Memories with metal-ferroelectric-semiconductor (MFS) transistors

Semiconductor memory device and method for controlling the same

Method for testing MRAM device and test apparatus thereof

Contactless communications using ferromagnetic material

CHIH YUE-DER

Reference cell configuration for sensing resistance states of MRAM bit cells

Adjusting reference resistances in determining MRAM resistance states

KAO YA-CHEN

MRAM cell structure with a blocking layer for avoiding short circuits

Test structures, methods of manufacturing thereof, test methods, and MRAM arrays

CHILIAD BIOMEDICAL TECH CO LTD

Dental clamping apparatus and operating method thereof

Abutment assembly and manufacturing method thereof

ACADEMIA SINICA

Compounds for use in prevention and treatment of neurodegenerative diseases and pain

Methods and compositions for treating pain

YU HUNG-CHANG

MRAM with current-based self-referenced read operations

LIN CHUN-JUNG

Reverse connection MTJ cell for STT MRAM

CHEN CHIH-MING

Structure and method for a MRAM device with an oxygen absorbing cap layer

LIN KAI-CHUN

Differential MRAM structure with relatively reversed magnetic tunnel junction elements enabling writing using same polarity current

YANG PING-LIN

Contactless communications using ferromagnetic material

IND TECH RES INST

Method and system for extracting road data and method and system for controlling self-driving car

WANG YU-JEN

Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process

LAI CHIH-HUANG

Domain wall assisted spin torque transfer magnetresistive random access memory structure

NAT CHUNG SHAN INST SCIENCE & TECH

Method of measuring azimuth of radar target

CHINA STEEL CORP

Piezoelectric buzzer