Inventor
JACOBS ERWIN
10 patents
Patents
10 patentsUS4257832AMar 24, 1981
Process for producing an integrated multi-layer insulator memory cell
SIEMENS AG157 citations98
US4761384AAug 2, 1988
Forming retrograde twin wells by outdiffusion of impurity ions in epitaxial layer followed by CMOS device processing
SIEMENS AG154 citations97
US4306353ADec 22, 1981
Process for production of integrated MOS circuits with and without MNOS memory transistors in silicon-gate technology
SIEMENS AG93 citations95
US4434543AMar 6, 1984
Process for producing adjacent tubs implanted with dopant ions in the manufacture of LSI complementary MOS field effect transistors
SIEMENS AG33 citations92
US4342149AAug 3, 1982
Method of making very short channel length MNOS and MOS devices by double implantation of one conductivity type subsequent to other type implantation
SIEMENS AG131 citations92
US4459741AJul 17, 1984
Method for producing VLSI complementary MOS field effect transistor circuits
SIEMENS AG18 citations73
US4459740AJul 17, 1984
Method for manufacturing VLSI complementary MOS field effect transistor circuits in silicon gate technology
SIEMENS AG11 citations72
US4330850AMay 18, 1982
MNOS Memory cell
SIEMENS AG11 citations72
US4027320AMay 31, 1977
Static storage element and process for the production thereof
SIEMENS AG18 citations71
US4511996AApr 16, 1985
Memory cell having a double gate field effect transistor and a method for its operation
SIEMENS AG5 citations62