Inventor
KIMURA AKITAKA
22 patents
⚠️ This page may combine multiple inventors who share the name “KIMURA AKITAKA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
16 patentsUS6100106AAug 8, 2000
Fabrication of nitride semiconductor light-emitting device
NEC CORP88 citations97
US6028877AFeb 22, 2000
Gallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrate
NEC CORP60 citations96
US6420198B1Jul 16, 2002
Gallium nitride based compound semiconductor laser and method of forming the same
NEC CORP24 citations92
US6201823B1Mar 13, 2001
Gallium nitride based compound semiconductor laser and method of forming the same
NEC CORP23 citations92
US5843227ADec 1, 1998
Crystal growth method for gallium nitride films
NEC CORP32 citations92
US7314672B2Jan 1, 2008
Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
NEC CORP9 citations84
US6096130AAug 1, 2000
Method of crystal growth of a GaN layer over a GaAs substrate
NEC CORP17 citations83
US5963787AOct 5, 1999
Method of producing gallium nitride semiconductor light emitting device
NEC CORP17 citations83
US6887726B2May 3, 2005
Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
NEC CORP9 citations73
US5559820ASep 24, 1996
Multiple quantum well semiconductor laser
NEC CORP8 citations73
US5425042AJun 13, 1995
Refractive index control optical semiconductor device
NEC CORP17 citations73
US6033490AMar 7, 2000
Growth of GaN layers on quartz substrates
NEC CORP11 citations72
US5825053AOct 20, 1998
Heterostructure III-V nitride semiconductor device including InP substrate
NEC CORP3 citations62
US7655485B2Feb 2, 2010
Semiconductor layer formed by selective deposition and method for depositing semiconductor layer
NEC CORP0 citations52
US7479448B2Jan 20, 2009
Method of manufacturing a light emitting device with a doped active layer
NEC CORP1 citations52
US7741654B2Jun 22, 2010
Group III nitride semiconductor optical device
NEC CORP0 citations40
SUMITOMO RUBBER IND
3 patentsUS4057090ANov 8, 1977
Puncture sealing pneumatic tire
SUMITOMO RUBBER IND58 citations91
US4262624AApr 21, 1981
Method of forming puncture preventing layer for tire and apparatus employed therefor
SUMITOMO RUBBER IND30 citations89
US4356214AOct 26, 1982
Method of forming puncture preventing layer for tire and apparatus employed therefor
SUMITOMO RUBBER IND18 citations78