Inventor
ISHIHARA SHUNICHI
JP71 patents
⚠️ This page may combine multiple inventors who share the name “ISHIHARA SHUNICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
49 patentsUS4759947AJul 26, 1988
Method for forming deposition film using Si compound and active species from carbon and halogen compound
CANON KK134 citations98
US4835005AMay 30, 1989
Process for forming deposition film
CANON KK106 citations97
US5910342AJun 8, 1999
Process for forming deposition film
CANON KK60 citations96
US5667597ASep 16, 1997
Polycrystalline silicon semiconductor having an amorphous silicon buffer layer
CANON KK64 citations96
US5288658AFeb 22, 1994
Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma
CANON KK80 citations96
US4798166AJan 17, 1989
Apparatus for continuously preparing a light receiving element for use in photoelectromotive force member or image-reading photosensor
CANON KK67 citations96
US4726963AFeb 23, 1988
Process for forming deposited film
CANON KK78 citations96
US4689093AAug 25, 1987
Process for the preparation of photoelectromotive force member
CANON KK60 citations96
US4657777AApr 14, 1987
Formation of deposited film
CANON KK61 citations96
US5246886ASep 21, 1993
Process for depositing a silicon-containing polycrystalline film on a substrate by way of growing Ge-crystalline nucleus
CANON KK45 citations93
US5244698ASep 14, 1993
Process for forming deposited film
CANON KK30 citations93
US5160543ANov 3, 1992
Device for forming a deposited film
CANON KK35 citations93
US5126169AJun 30, 1992
Process for forming a deposited film from two mutually reactive active species
CANON KK23 citations93
US5028488AJul 2, 1991
Functional ZnSe1-x Tex :H deposited film
CANON KK27 citations93
US4959106ASep 25, 1990
Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %
CANON KK49 citations93
US4926229AMay 15, 1990
Pin junction photovoltaic element with P or N-type semiconductor layer comprising non-single crystal material containing Zn, Se, H in an amount of 1 to 4 atomic % and a dopant and I-type semiconductor layer comprising non-single crystal Si(H,F) material
CANON KK28 citations93
US4888062ADec 19, 1989
Pin junction photovoltaic element having I-type semiconductor layer comprising non-single crystal material containing at least Zn, Se and H in an amount of 1 to 4 atomic %
CANON KK37 citations93
US4853251AAug 1, 1989
Process for forming deposited film including carbon as a constituent element
CANON KK30 citations93
US4851302AJul 25, 1989
Functional ZnSe:H deposited films
CANON KK32 citations93
US4818563AApr 4, 1989
Process for forming deposited film
CANON KK32 citations93
US4812325AMar 14, 1989
Method for forming a deposited film
CANON KK42 citations93
US4801468AJan 31, 1989
Process for forming deposited film
CANON KK35 citations93
US4784874ANov 15, 1988
Process for forming deposited film
CANON KK30 citations93
US4778692AOct 18, 1988
Process for forming deposited film
CANON KK35 citations93
US4772486ASep 20, 1988
Process for forming a deposited film
CANON KK27 citations93
US4728528AMar 1, 1988
Process for forming deposited film
CANON KK40 citations93
US4717586AJan 5, 1988
Process for forming deposited film
CANON KK31 citations93
US4717585AJan 5, 1988
Process for forming deposited film
CANON KK41 citations93
US4716048ADec 29, 1987
Process for forming deposited film
CANON KK37 citations93
US4702934AOct 27, 1987
Electrophotographic photosensitive member, process and apparatus for the preparation thereof
CANON KK31 citations93
US4674434AJun 23, 1987
Apparatus for forming deposited film
CANON KK31 citations93
US4818560AApr 4, 1989
Method for preparation of multi-layer structure film
CANON KK34 citations92
US4414581ANov 8, 1983
Image signal processing method and apparatus therefor
CANON KK32 citations92
US4885258ADec 5, 1989
Method for making a thin film transistor using a concentric inlet feeding system
CANON KK25 citations91
US6653554B2Nov 25, 2003
Thin film polycrystalline solar cells and methods of forming same
CANON KK17 citations84
US5213997AMay 25, 1993
Method for forming crystalline film employing localized heating of the substrate
CANON KK19 citations82
US5008726AApr 16, 1991
PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %
CANON KK21 citations82
US4751192AJun 14, 1988
Process for the preparation of image-reading photosensor
CANON KK21 citations82
US5956602ASep 21, 1999
Deposition of polycrystal Si film
CANON KK10 citations74
US5645947AJul 8, 1997
Silicon-containing deposited film
CANON KK8 citations74
US5644145AJul 1, 1997
Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma
CANON KK15 citations74
US5322568AJun 21, 1994
Apparatus for forming deposited film
CANON KK14 citations74
US5178904AJan 12, 1993
Process for forming deposited film from a group II through group VI metal hydrocarbon compound
CANON KK14 citations74
US5154135AOct 13, 1992
Apparatus for forming a deposited film
CANON KK16 citations74
US4855210AAug 8, 1989
Electrophotographic photosensitive member, process and apparatus for the preparation thereof
CANON KK11 citations74
US4849249AJul 18, 1989
Deposited film forming process and deposited film forming device
CANON KK11 citations74
US4824697AApr 25, 1989
Method for forming a multi-layer deposited film
CANON KK10 citations74
US4818564AApr 4, 1989
Method for forming deposited film
CANON KK10 citations74
US4803093AFeb 7, 1989
Process for preparing a functional deposited film
CANON KK18 citations74
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