Inventor
HIEBER KONRAD
DE23 patents
Patents
23 patentsUS4510670AApr 16, 1985
Method for the manufacture of integrated MOS-field effect transistor circuits silicon gate technology having diffusion zones coated with silicide as low-impedance printed conductors
SIEMENS AG204 citations99
US5478780ADec 26, 1995
Method and apparatus for producing conductive layers or structures for VLSI circuits
SIEMENS AG57 citations94
US4767496AAug 30, 1988
Method for controlling and supervising etching processes
SIEMENS AG43 citations92
US4740479AApr 26, 1988
Method for the manufacture of cross-couplings between n-channel and p-channel CMOS field effect transistors of static write-read memories
SIEMENS AG28 citations92
US4543576ASep 24, 1985
System for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter deposition
SIEMENS AG43 citations92
US5399389AMar 21, 1995
Method for locally and globally planarizing chemical vapor deposition of SiO2 layers onto structured silicon substrates
SIEMENS AG31 citations90
US4680612AJul 14, 1987
Integrated semiconductor circuit including a tantalum silicide diffusion barrier
SIEMENS AG28 citations90
US4608271AAug 26, 1986
Method for the manufacture of metal silicide layers by means of reduced pressure gas phase deposition
SIEMENS AG36 citations89
US4673968AJun 16, 1987
Integrated MOS transistors having a gate metallization composed of tantalum or niobium or their silicides
SIEMENS AG18 citations82
US4351695ASep 28, 1982
Method of producing low-resistant, monocrystalline metallic layers by implanting ions into a polycrystalline metal layer and heating to produce a monocrystalline layer
SIEMENS AG24 citations82
US4331702AMay 25, 1982
Method for reproducible manufacture of metallic layers
SIEMENS AG25 citations82
US4258658AMar 31, 1981
CVD Coating device for small parts
SIEMENS AG20 citations79
US4501769AFeb 26, 1985
Method for selective deposition of layer structures consisting of silicides of HMP metals on silicon substrates and products so-formed
SIEMENS AG26 citations78
US4810335AMar 7, 1989
Method for monitoring etching processes
SIEMENS AG18 citations74
US4640844AFeb 3, 1987
Method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point and doped polycrystalline silicon
SIEMENS AG18 citations74
US4592921AJun 3, 1986
Method for monitoring and regulating the composition and the layer thickness of metallically conductive alloy layers during their manufacture
SIEMENS AG13 citations74
US4562089ADec 31, 1985
Method of measuring electric resistance of thin metallic layers manufactured under the influence of a plasma
SIEMENS AG8 citations74
US4414274ANov 8, 1983
Thin film electrical resistors and process of producing the same
SIEMENS AG18 citations74
US6057229AMay 2, 2000
Method for metallizing submicron contact holes in semiconductor bodies
SIEMENS AG12 citations73
US4294871AOct 13, 1981
Method for depositing a layer on the inside of cavities of a work piece
SIEMENS AG19 citations71
US4048954ASep 20, 1977
Coating device for small electrically conductive components
SIEMENS AG4 citations61
US3958071AMay 18, 1976
Electrical resistor and method of producing same
SIEMENS AG4 citations61
US5526122AJun 11, 1996
Method for determining the mass flow of gases on the basis of optical absorption and employment of said method
SIEMENS AG3 citations57