Inventor
PRINDLE CHRISTOPHER MICHAEL
US3 patents
Patents
3 patentsUS9640533B2May 2, 2017
Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression
GLOBALFOUNDRIES INC14 citations80
US9230802B2Jan 5, 2016
Transistor(s) with different source/drain channel junction characteristics, and methods of fabrication
GLOBALFOUNDRIES INC2 citations55
US10068978B2Sep 4, 2018
Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppression
GLOBALFOUNDRIES INC0 citations48