P

Inventor

KIM BONG-SOO

KR164 patents
⚠️ This page may combine multiple inventors who share the name “KIM BONG-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

32 patents
US7368352B2May 6, 2008

Semiconductor devices having transistors with vertical channels and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD61 citations98
US10784272B2Sep 22, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10535659B2Jan 14, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD25 citations94
US10468350B2Nov 5, 2019

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD12 citations92
US7781285B2Aug 24, 2010

Semiconductor device having vertical transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD22 citations92
US7586149B2Sep 8, 2009

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US10468414B2Nov 5, 2019

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD17 citations86
US11205652B2Dec 21, 2021

Semiconductor memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD6 citations84
US10978397B2Apr 13, 2021

Semiconductor memory device

SAMSUNG ELECTRONICS CO LTD5 citations84
US10861854B2Dec 8, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD9 citations84
US10615164B2Apr 7, 2020

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US10573652B2Feb 25, 2020

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84
US10269808B2Apr 23, 2019

Semiconductor devices and methods of forming semiconductor devices

SAMSUNG ELECTRONICS CO LTD4 citations84
US9871093B2Jan 16, 2018

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD8 citations84
US8039896B2Oct 18, 2011

Semiconductor memory device with vertical channel formed on semiconductor pillars

SAMSUNG ELECTRONICS CO LTD8 citations84
US8022457B2Sep 20, 2011

Semiconductor memory device having vertical channel transistor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7728373B2Jun 1, 2010

DRAM device with cell epitaxial layers partially overlap buried cell gate electrode

SAMSUNG ELECTRONICS CO LTD13 citations84
US7387931B2Jun 17, 2008

Semiconductor memory device with vertical channel transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US10395706B2Aug 27, 2019

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD5 citations83
US10332831B2Jun 25, 2019

Semiconductor device including a bit line

SAMSUNG ELECTRONICS CO LTD7 citations83
US9847278B2Dec 19, 2017

Semiconductor devices having air spacers and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD12 citations83
US9634012B2Apr 25, 2017

Method of forming active patterns, active pattern array, and method of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD15 citations83
US9082647B2Jul 14, 2015

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD10 citations83
US7619281B2Nov 17, 2009

Semiconductor device having buried gate line and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US10461153B2Oct 29, 2019

Semiconductor memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD11 citations82
US7531874B2May 12, 2009

Field effect transistors including source/drain regions extending beneath pillars

SAMSUNG ELECTRONICS CO LTD9 citations82
US11844212B2Dec 12, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD1 citations73
US11616065B2Mar 28, 2023

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11355509B2Jun 7, 2022

Semiconductor memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11251307B2Feb 15, 2022

Device comprising 2D material

SAMSUNG ELECTRONICS CO LTD2 citations73
US10971496B2Apr 6, 2021

Semiconductor device having hybrid capacitors

SAMSUNG ELECTRONICS CO LTD4 citations73
US10665498B2May 26, 2020

Semiconductor device having air gap spacer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD5 citations73

LG ELECTRONICS INC

2 patents

SHIN CHANG SUB

2 patents

SAMSUNG ELECTRO MECH

1 patent

NOVERA OPTICS INC

1 patent

KOREA ELECTRONICS TELECOMM

1 patent

YOON JAE-MAN

1 patent

HYNIX SEMICONDUCTOR INC

1 patent

KIM BONG SOO

1 patent

CHO SUNG-IL

1 patent

KIM BONG-SOO

1 patent

ELECT & TELECOMM RESEARCH INST

1 patent

SEO HYEOUNG-WON

1 patent

CHOI BYEONG CHEOL

1 patent

SHIM JAE GYUN

1 patent

CHOI HAENG KEOL

1 patent

HYUNDAI MICRO ELECTRONICS CO

1 patent

Showing the top 50 of 164 patents by PatentIndex Score.