P

Inventor

LEE KANG-YOON

KR91 patents
⚠️ This page may combine multiple inventors who share the name “LEE KANG-YOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

27 patents
US7368352B2May 6, 2008

Semiconductor devices having transistors with vertical channels and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD61 citations98
US6326270B1Dec 4, 2001

Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines

SAMSUNG ELECTRONICS CO LTD101 citations98
US6767813B2Jul 27, 2004

Integrated circuit devices having active regions with expanded effective widths and methods of manufacturing same

SAMSUNG ELECTRONICS CO LTD34 citations93
US6207574B1Mar 27, 2001

Method for fabricating a DRAM cell storage node

SAMSUNG ELECTRONICS CO LTD24 citations93
US5795801AAug 18, 1998

MethodS of fabricating profiled device wells for improved device isolation

SAMSUNG ELECTRONICS CO LTD37 citations93
US5702969ADec 30, 1997

Buried bit line DRAM cells and fabricating methods therefor

SAMSUNG ELECTRONICS CO LTD37 citations93
US7781285B2Aug 24, 2010

Semiconductor device having vertical transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD22 citations92
US7586149B2Sep 8, 2009

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD34 citations92
US8039896B2Oct 18, 2011

Semiconductor memory device with vertical channel formed on semiconductor pillars

SAMSUNG ELECTRONICS CO LTD8 citations84
US8022457B2Sep 20, 2011

Semiconductor memory device having vertical channel transistor and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD13 citations84
US7728373B2Jun 1, 2010

DRAM device with cell epitaxial layers partially overlap buried cell gate electrode

SAMSUNG ELECTRONICS CO LTD13 citations84
US7387931B2Jun 17, 2008

Semiconductor memory device with vertical channel transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD12 citations84
US6287971B1Sep 11, 2001

Method for forming a cell capacitor in DRAM device

SAMSUNG ELECTRONICS CO LTD16 citations84
US7619281B2Nov 17, 2009

Semiconductor device having buried gate line and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations83
US5900659AMay 4, 1999

Buried bit line DRAM cells

SAMSUNG ELECTRONICS CO LTD16 citations82
US7701002B2Apr 20, 2010

Semiconductor device having buried gate electrode and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD15 citations79
US7187032B2Mar 6, 2007

Integrated circuit devices having active regions with expanded effective widths

SAMSUNG ELECTRONICS CO LTD6 citations74
US6780707B2Aug 24, 2004

Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area

SAMSUNG ELECTRONICS CO LTD11 citations74
US6162690ADec 19, 2000

Methods of forming field effect transistors having self-aligned intermediate source and drain contacts

SAMSUNG ELECTRONICS CO LTD9 citations74
USRE46890EJun 12, 2018

Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area

SAMSUNG ELECTRONICS CO LTD2 citations73
US11163407B2Nov 2, 2021

Input device including pen tip, electronic system and control method therefor

SAMSUNG ELECTRONICS CO LTD3 citations72
US9647609B2May 9, 2017

Transceiver using technique for improvement of phase noise and switching of phase lock loop (PLL)

SAMSUNG ELECTRONICS CO LTD4 citations72
US11101695B2Aug 24, 2021

Electronic device for wirelessly receiving power and method for operating the same

SAMSUNG ELECTRONICS CO LTD2 citations70
US8053307B2Nov 8, 2011

Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode

SAMSUNG ELECTRONICS CO LTD5 citations63
US7915968B2Mar 29, 2011

Digitally controlled oscillator (DCO)

SAMSUNG ELECTRONICS CO LTD2 citations63
US7776692B2Aug 17, 2010

Semiconductor device having a vertical channel and method of manufacturing same

SAMSUNG ELECTRONICS CO LTD3 citations63
US7710835B2May 4, 2010

High resolution time detecting apparatus using interpolation and time detecting method using the same

SAMSUNG ELECTRONICS CO LTD5 citations63

RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV

7 patents

GCT SEMICONDUCTOR INC

4 patents

LG ELECTRONICS INC

3 patents

UNIV SUNGKYUNKWAN RES & BUS

2 patents

SAMSUNG ELECTRO MECH

1 patent

KIM BONG-SOO

1 patent

LEE SEUNG SIK

1 patent

LEE JAE-SUP

1 patent

SKAICHIPS CO LTD

1 patent

INTELLECTUAL DISCOVERY CO LTD

1 patent

SILICON MITUS INC

1 patent

Showing the top 50 of 91 patents by PatentIndex Score.