Inventor
LEE KANG-YOON
KR91 patents
⚠️ This page may combine multiple inventors who share the name “LEE KANG-YOON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
27 patentsUS7368352B2May 6, 2008
Semiconductor devices having transistors with vertical channels and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD61 citations98
US6326270B1Dec 4, 2001
Methods of forming integrated circuit memory devices using masking layers to inhibit overetching of impurity regions and conductive lines
SAMSUNG ELECTRONICS CO LTD101 citations98
US6767813B2Jul 27, 2004
Integrated circuit devices having active regions with expanded effective widths and methods of manufacturing same
SAMSUNG ELECTRONICS CO LTD34 citations93
US6207574B1Mar 27, 2001
Method for fabricating a DRAM cell storage node
SAMSUNG ELECTRONICS CO LTD24 citations93
US5795801AAug 18, 1998
MethodS of fabricating profiled device wells for improved device isolation
SAMSUNG ELECTRONICS CO LTD37 citations93
US5702969ADec 30, 1997
Buried bit line DRAM cells and fabricating methods therefor
SAMSUNG ELECTRONICS CO LTD37 citations93
US7781285B2Aug 24, 2010
Semiconductor device having vertical transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US7586149B2Sep 8, 2009
Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD34 citations92
US8039896B2Oct 18, 2011
Semiconductor memory device with vertical channel formed on semiconductor pillars
SAMSUNG ELECTRONICS CO LTD8 citations84
US8022457B2Sep 20, 2011
Semiconductor memory device having vertical channel transistor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7728373B2Jun 1, 2010
DRAM device with cell epitaxial layers partially overlap buried cell gate electrode
SAMSUNG ELECTRONICS CO LTD13 citations84
US7387931B2Jun 17, 2008
Semiconductor memory device with vertical channel transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US6287971B1Sep 11, 2001
Method for forming a cell capacitor in DRAM device
SAMSUNG ELECTRONICS CO LTD16 citations84
US7619281B2Nov 17, 2009
Semiconductor device having buried gate line and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations83
US5900659AMay 4, 1999
Buried bit line DRAM cells
SAMSUNG ELECTRONICS CO LTD16 citations82
US7701002B2Apr 20, 2010
Semiconductor device having buried gate electrode and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD15 citations79
US7187032B2Mar 6, 2007
Integrated circuit devices having active regions with expanded effective widths
SAMSUNG ELECTRONICS CO LTD6 citations74
US6780707B2Aug 24, 2004
Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area
SAMSUNG ELECTRONICS CO LTD11 citations74
US6162690ADec 19, 2000
Methods of forming field effect transistors having self-aligned intermediate source and drain contacts
SAMSUNG ELECTRONICS CO LTD9 citations74
USRE46890EJun 12, 2018
Method of forming semiconductor device having contact pad on source/drain region in peripheral circuit area
SAMSUNG ELECTRONICS CO LTD2 citations73
US11163407B2Nov 2, 2021
Input device including pen tip, electronic system and control method therefor
SAMSUNG ELECTRONICS CO LTD3 citations72
US9647609B2May 9, 2017
Transceiver using technique for improvement of phase noise and switching of phase lock loop (PLL)
SAMSUNG ELECTRONICS CO LTD4 citations72
US11101695B2Aug 24, 2021
Electronic device for wirelessly receiving power and method for operating the same
SAMSUNG ELECTRONICS CO LTD2 citations70
US8053307B2Nov 8, 2011
Method of fabricating semiconductor device with cell epitaxial layers partially overlap buried cell gate electrode
SAMSUNG ELECTRONICS CO LTD5 citations63
US7915968B2Mar 29, 2011
Digitally controlled oscillator (DCO)
SAMSUNG ELECTRONICS CO LTD2 citations63
US7776692B2Aug 17, 2010
Semiconductor device having a vertical channel and method of manufacturing same
SAMSUNG ELECTRONICS CO LTD3 citations63
US7710835B2May 4, 2010
High resolution time detecting apparatus using interpolation and time detecting method using the same
SAMSUNG ELECTRONICS CO LTD5 citations63
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV
7 patentsUS11296819B2Apr 5, 2022
Receiver control apparatus and method for simultaneous wireless information and power transmission operating in dual mode
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV4 citations73
US11095169B2Aug 17, 2021
SWIPT signal receiver and SWIPT signal receiving method
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV3 citations73
US10819164B2Oct 27, 2020
Adaptive mode switching method for simultaneous wireless power/information transmission operating in dual mode and apparatus for performing the same
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV3 citations73
US10003345B2Jun 19, 2018
Clock and data recovery circuit using digital frequency detection
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV6 citations71
US9876440B1Jan 23, 2018
Active rectifier capable of preventing reverse leakage current
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV2 citations71
US10541567B2Jan 21, 2020
Wireless power transfer apparatus, wireless power receiving apparatus, wireless power transfer method, wireless power receiving method, wireless power transfer system using dual mode and recording medium thereof
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV4 citations69
US10708102B2Jul 7, 2020
Simultaneous wireless information and power transmission method, and transmission apparatus and reception apparatus using the same
RESEARCH & BUSINESS FOUND SUNGKYUNKWAN UNIV1 citations62
GCT SEMICONDUCTOR INC
4 patentsUS6553089B2Apr 22, 2003
Fractional-N frequency synthesizer with fractional compensation method
GCT SEMICONDUCTOR INC59 citations95
US6704383B2Mar 9, 2004
Sample and hold type fractional-N frequency synthesizer
GCT SEMICONDUCTOR INC38 citations92
US7512390B2Mar 31, 2009
System and method for tuning a frequency generator using an LC oscillator
GCT SEMICONDUCTOR INC11 citations84
US6963620B2Nov 8, 2005
Communication transmitter using offset phase-locked-loop
GCT SEMICONDUCTOR INC8 citations74
LG ELECTRONICS INC
3 patentsUNIV SUNGKYUNKWAN RES & BUS
2 patentsUS9577575B2Feb 21, 2017
Injection locked frequency divider capable of adjusting oscillation frequency
UNIV SUNGKYUNKWAN RES & BUS2 citations73
US9774274B2Sep 26, 2017
Active rectifier and wireless power receiving apparatus using the same that can reduce reverse current leakage
UNIV SUNGKYUNKWAN RES & BUS4 citations72
SAMSUNG ELECTRO MECH
1 patentKIM BONG-SOO
1 patentLEE SEUNG SIK
1 patentLEE JAE-SUP
1 patentSKAICHIPS CO LTD
1 patentINTELLECTUAL DISCOVERY CO LTD
1 patentSILICON MITUS INC
1 patentShowing the top 50 of 91 patents by PatentIndex Score.