Inventor

PARK DONG-GUN

KR133 patents

⚠️ This page may combine multiple inventors who share the name “PARK DONG-GUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

PARK DONG-GUN

SAMSUNG ELECTRONICS CO LTD

Methods of fabricating multichannel metal oxide semiconductor (MOS) transistors

Method of fabricating a semiconductor device having self-aligned floating gate and related device

Methods of forming fin field effect transistors using oxidation barrier layers

Semiconductor devices having transistors with vertical channels and method of fabricating the same

Methods of fabricating fin field transistors

Fin field effect transistor device and method of fabricating the same

Field effect transistors having multiple stacked channels

Methods of fabricating field effect transistors having multiple stacked channels

Semiconductor devices with enlarged recessed gate electrodes

Fin FET structure

Methods of manufacturing semiconductor devices having a support structure for an active layer pattern

Fin-FET having GAA structure and methods of fabricating the same

Method for forming non-volatile memory devices

Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regions

Semiconductor devices including stress inducing layers

Semiconductor devices having a field effect transistor and methods of fabricating the same

Non-volatile memory devices

Methods of forming self-aligned contact structures in semiconductor integrated circuit devices

Methods of forming self-aligned contact structures in semiconductor integrated circuit devices

Integrated circuit semiconductor device including stacked level transistors

Methods of manufacturing vertical channel semiconductor devices

Semiconductor device having vertical transistor and method of fabricating the same

Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same

Methods of fabricating field effect transistors having multiple stacked channels

Method for forming a FinFET by a damascene process

Vertical channel semiconductor devices and methods of manufacturing the same

Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels

Method of operating a flash memory device

Methods of fabrication metal oxide semiconductor (MOS) transistors having buffer regions below source and drain regions

Self-aligned semiconductor contact structures and methods for fabricating the same

Method of forming fin field effect transistor

Field effect transistors having multiple stacked channels

Double gate MOS transistors

Methods of manufacturing semiconductor memory devices including a vertical channel transistor

Double gate field effect transistor and method of manufacturing the same

Semiconductor memory device with vertical channel formed on semiconductor pillars

Semiconductor memory device having vertical channel transistor and method for fabricating the same

Field effect transistor (FET) devices and methods of manufacturing FET devices

Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structures

Method of forming semiconductor devices having a vertical channel transistor

Methods of forming integrated circuit devices having field effect transistors of different types in different device regions

Method of forming fin field effect transistor using damascene process

Semiconductor devices having a field effect transistor and methods of fabricating the same

Nonvolatile memory device having multi-bit storage and method of manufacturing the same

Metal oxide semiconductor (MOS) transistors having three dimensional channels

OH CHANG-WOO

Field effect transistor and method for manufacturing the same

Fin field effect transistors including oxidation barrier layers

Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the same

Semiconductor device having floating body element and bulk body element

LEE JOO-YOUNG

Methods of forming semiconductor devices having recessed channels