Inventor
KIM SEONG-GOO
KR24 patents
⚠️ This page may combine multiple inventors who share the name “KIM SEONG-GOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
19 patentsUS7368352B2May 6, 2008
Semiconductor devices having transistors with vertical channels and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD61 citations98
US7781285B2Aug 24, 2010
Semiconductor device having vertical transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US7781287B2Aug 24, 2010
Methods of manufacturing vertical channel semiconductor devices
SAMSUNG ELECTRONICS CO LTD14 citations92
US7713873B2May 11, 2010
Methods of forming contact structures semiconductor devices
SAMSUNG ELECTRONICS CO LTD19 citations92
US7586149B2Sep 8, 2009
Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD34 citations92
US7348628B2Mar 25, 2008
Vertical channel semiconductor devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD30 citations92
US8039896B2Oct 18, 2011
Semiconductor memory device with vertical channel formed on semiconductor pillars
SAMSUNG ELECTRONICS CO LTD8 citations84
US8022457B2Sep 20, 2011
Semiconductor memory device having vertical channel transistor and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD13 citations84
US7759198B2Jul 20, 2010
Method of forming semiconductor devices having a vertical channel transistor
SAMSUNG ELECTRONICS CO LTD8 citations84
US7411240B2Aug 12, 2008
Integrated circuits including spacers that extend beneath a conductive line
SAMSUNG ELECTRONICS CO LTD12 citations84
US7387931B2Jun 17, 2008
Semiconductor memory device with vertical channel transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD12 citations84
US6930341B2Aug 16, 2005
Integrated circuits including insulating spacers that extend beneath a conductive line
SAMSUNG ELECTRONICS CO LTD15 citations84
US7297998B2Nov 20, 2007
Semiconductor devices having a buried and enlarged contact hole and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations71
US7074718B2Jul 11, 2006
Method of fabricating a semiconductor device having a buried and enlarged contact hole
SAMSUNG ELECTRONICS CO LTD10 citations71
US8378497B2Feb 19, 2013
Contact structures and semiconductor devices including the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7888720B2Feb 15, 2011
Semiconductor device including conductive lines with fine line width and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7952129B2May 31, 2011
Semiconductor devices having a vertical channel transistor
SAMSUNG ELECTRONICS CO LTD0 citations52
US7659597B2Feb 9, 2010
Integrated circuit wire patterns including integral plug portions
SAMSUNG ELECTRONICS CO LTD0 citations42
US7439581B2Oct 21, 2008
Transistors, semiconductor integrated circuit interconnections and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations42
SEO HYEOUNG-WON
3 patentsUS8283714B2Oct 9, 2012
Semiconductor memory device having vertical channel transistor and method for fabricating the same
SEO HYEOUNG-WON3 citations62
US8482045B2Jul 9, 2013
Semiconductor memory device having vertical channel transistor and method for fabricating the same
SEO HYEOUNG-WON0 citations51
US8164119B2Apr 24, 2012
Semiconductor device including conductive lines with fine line width and method of fabricating the same
SEO HYEOUNG-WON1 citations50