Inventor

TATSUMI TORU

JP42 patents

⚠️ This page may combine multiple inventors who share the name “TATSUMI TORU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TATSUMI TORU

NEC CORP

Method for fabricating polycrystalline silicon having micro roughness on the surface

Method for manufacturing a semiconductor device having contact plug made of Si/SiGe/Si

Method of manufacturing polysilicon film including recrystallization of an amorphous film

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film

Monocrystalline semiconductor photodetector

Semiconductor device having polycrystalline silicon layer with uneven surface defined by hemispherical or mushroom like shape silicon grain

Semiconductor device and manufacturing method of the same

Method of manufacturing a semiconducter device capable of easily forming metal silicide films on source and drain regions

Apparatus and method for depositing a film on a substrate by chemical vapor deposition

Method for forming amorphous carbon thin film by plasma chemical vapor deposition

Method for fabricating polycrystalline silicon having micro roughness on the surface

Semiconductor device and method for manufacturing same

Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same

Semiconductor device having contact plug and method for manufacturing the same

Semiconductor device and fabrication process thereof

Semiconductor device including a MIS transistor

Semiconductor device with silicide-containing gate electrode and method of fabricating the same

Method for fabricating polycrystalline silicon having micro roughness on the surface

Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device

Semiconductor manufacturing method

Process for producing a semiconductor device

Metal oxide dielectric film

Method for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layer

Vapor phase growth method

Semiconductor device, production method and production device thereof

Semiconductor device having a mis-type fet, and methods for manufacturing the same and forming a metal oxide film

Process for fabricating semiconductor device having semiconductor layers epitaxially grown from active areas without short-circuit on field insulating layer

ANELVA CORP

Thin film deposition method

Thin film deposition method for wafer

Vacuum film forming apparatus

CANON ANELVA CORP

Method of manufacturing dielectric film that has hafnium-containing and aluminum-containing oxynitride

Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

Dielectric film and semiconductor device using dielectric film including hafnium, aluminum or silicon, nitrogen, and oxygen

NAKAGAWA TAKASHI

Semiconductor device and method of manufacturing the same

Dielectric, capacitor using dielectric, semiconductor device using dielectric, and manufacturing method of dielectric

Methods for manufacturing dielectric films

TOKYO ELECTRON LTD

Method for forming thin film and apparatus for forming thin film

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

Rear-projection screen and rear-projection image display

FUJIKATA JUNICHI

SiGe photodiode

RENESAS ELECTRONICS CORP

Formation method of metallic compound layer, manufacturing method of semiconductor device, and formation apparatus for metallic compound layer

KITANO NAOMU

Dielectric film with hafnium aluminum oxynitride film

SEINO TAKUYA

Method of manufacturing hafnium-containing and silicon-containing metal oxynitride dielectric film