Inventor
TSUNODA TETSUJIRO
JP37 patents
⚠️ This page may combine multiple inventors who share the name “TSUNODA TETSUJIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
24 patentsUS6346464B1Feb 12, 2002
Manufacturing method of semiconductor device
TOSHIBA KK146 citations99
US5488256AJan 30, 1996
Semiconductor device with interconnect substrates
TOSHIBA KK78 citations96
US5466969ANov 14, 1995
Intelligent power device module
TOSHIBA KK48 citations96
US5143865ASep 1, 1992
Metal bump type semiconductor device and method for manufacturing the same
TOSHIBA KK61 citations95
US6060772AMay 9, 2000
Power semiconductor module with a plurality of semiconductor chips
TOSHIBA KK121 citations94
US6002153ADec 14, 1999
MOS type semiconductor device with a current detecting function
TOSHIBA KK26 citations92
US5384683AJan 24, 1995
Intelligent power device module
TOSHIBA KK35 citations92
US5347158ASep 13, 1994
Semiconductor device having a particular terminal arrangement
TOSHIBA KK50 citations92
US5286655AFeb 15, 1994
Method of manufacturing a semiconductor device of an anode short circuit structure
TOSHIBA KK39 citations92
US5250446AOct 5, 1993
Method of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depths
TOSHIBA KK48 citations92
US5243205ASep 7, 1993
Semiconductor device with overvoltage protective function
TOSHIBA KK35 citations92
US5023684AJun 11, 1991
Composite semiconductor device having function for overcurrent detection
TOSHIBA KK33 citations92
USD464618SOct 22, 2002
Power converter
TOSHIBA KK18 citations91
US6417532B2Jul 9, 2002
Power semiconductor module for use in power conversion units with downsizing requirements
TOSHIBA KK26 citations91
US5124772AJun 23, 1992
Insulated gate bipolar transistor with a shortened carrier lifetime region
TOSHIBA KK34 citations91
USD466076SNov 26, 2002
Power converter
TOSHIBA KK35 citations90
US5032880AJul 16, 1991
Semiconductor device having an interposing layer between an electrode and a connection electrode
TOSHIBA KK15 citations74
US4920062AApr 24, 1990
Manufacturing method for vertically conductive semiconductor devices
TOSHIBA KK16 citations74
USD476622SJul 1, 2003
Portion of a power converter
TOSHIBA KK8 citations72
USD467869SDec 31, 2002
Portion of power converter
TOSHIBA KK6 citations72
US5115300AMay 19, 1992
High-power semiconductor device
TOSHIBA KK7 citations71
USRE41181EMar 30, 2010
Manufacturing method of semiconductor device
TOSHIBA KK3 citations63
USD475012SMay 27, 2003
Portion of a power converter
TOSHIBA KK5 citations61
US7091554B2Aug 15, 2006
Semiconductor device
TOSHIBA KK1 citations51
MITSUBISHI ELECTRIC CORP
9 patentsUS7675113B2Mar 9, 2010
Insulated gate transistor
MITSUBISHI ELECTRIC CORP21 citations89
US7872337B2Jan 18, 2011
Semiconductor device having a flexible board for connection to a semiconductor chip mounted on an insulating substrate
MITSUBISHI ELECTRIC CORP3 citations63
US12550728B2Feb 10, 2026
Semiconductor device comprising a heat dissipation plate including a thick portion and a thin portion
MITSUBISHI ELECTRIC CORP0 citations62
US11901416B2Feb 13, 2024
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations62
US7772669B2Aug 10, 2010
Semiconductor device having an improved structure for high withstand voltage
MITSUBISHI ELECTRIC CORP2 citations61
US7777249B2Aug 17, 2010
Semiconductor device with enhanced switching speed and method for manufacturing the same
MITSUBISHI ELECTRIC CORP4 citations60
US10389229B2Aug 20, 2019
Power module
MITSUBISHI ELECTRIC CORP0 citations42
US10354940B2Jul 16, 2019
Semiconductor device
MITSUBISHI ELECTRIC CORP0 citations39
US9735226B1Aug 15, 2017
Power module
MITSUBISHI ELECTRIC CORP0 citations36