P

Inventor

MA MANNY

US19 patents

Patents

19 patents
US6069506AMay 30, 2000

Method and apparatus for improving the performance of digital delay locked loop circuits

MICRON TECHNOLOGY INC175 citations99
US6316976B1Nov 13, 2001

Method and apparatus for improving the performance of digital delay locked loop circuits

MICRON TECHNOLOGY INC69 citations96
US5885864AMar 23, 1999

Method for forming compact memory cell using vertical devices

MICRON TECHNOLOGY INC75 citations96
US6040733AMar 21, 2000

Two-stage fusible electrostatic discharge protection circuit

MICRON TECHNOLOGY INC21 citations92
US5656967AAug 12, 1997

Two-stage fusible electrostatic discharge protection circuit

MICRON TECHNOLOGY INC17 citations82
US5985766ANov 16, 1999

Semiconductor processing methods of forming a contact opening

MICRON TECHNOLOGY INC10 citations74
US5805009ASep 8, 1998

Method for operating an electrostatic discharge protection circuit

MICRON TECHNOLOGY INC7 citations74
US6653220B2Nov 25, 2003

Advance metallization process

MICRON TECHNOLOGY INC9 citations73
US6518178B1Feb 11, 2003

Method for forming a field effect transistor having increased breakdown voltage

MICRON TECHNOLOGY INC5 citations73
US5976915ANov 2, 1999

Low mutual inductance lead frame device

MICRON TECHNOLOGY INC12 citations73
US5949114ASep 7, 1999

Semiconductor device having increased breakdown voltage and method of fabricating same

MICRON TECHNOLOGY INC4 citations73
US5880520AMar 9, 1999

Low mutual inductance lead frame device

MICRON TECHNOLOGY INC11 citations73
US5841723ANov 24, 1998

Method and apparatus for programming anti-fuses using an isolated well programming circuit

MICRON TECHNOLOGY INC16 citations73
US6274482B1Aug 14, 2001

Semiconductor processing methods of forming a contact opening

MICRON TECHNOLOGY INC2 citations63
US6444577B1Sep 3, 2002

Method of fabricating a semiconductor device having increased breakdown voltage

MICRON TECHNOLOGY INC1 citations62
US6281109B1Aug 28, 2001

Advance metallization process

MICRON TECHNOLOGY INC4 citations62
US6066548AMay 23, 2000

Advance metallization process

MICRON TECHNOLOGY INC3 citations62
US6524922B1Feb 25, 2003

Semiconductor device having increased breakdown voltage and method of fabricating same

MICRON TECHNOLOGY INC0 citations52
US6444572B2Sep 3, 2002

Semiconductor processing methods of forming a contact opening

MICRON TECHNOLOGY INC0 citations52