P

Inventor

RAHMAN M DALIL

US74 patents
⚠️ This page may combine multiple inventors who share the name “RAHMAN M DALIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CLARIANT FINANCE BVI LTD

18 patents
US6447980B1Sep 10, 2002

Photoresist composition for deep UV and process thereof

CLARIANT FINANCE BVI LTD144 citations99
US5981145ANov 9, 1999

Light absorbing polymers

CLARIANT FINANCE BVI LTD59 citations96
US6610465B2Aug 26, 2003

Process for producing film forming resins for photoresist compositions

CLARIANT FINANCE BVI LTD23 citations92
US5994430ANov 30, 1999

Antireflective coating compositions for photoresist compositions and use thereof

CLARIANT FINANCE BVI LTD42 citations92
US6106995AAug 22, 2000

Antireflective coating material for photoresists

CLARIANT FINANCE BVI LTD14 citations74
US6043002AMar 28, 2000

Metal ion reduction in novolak resin solution using an anion exchange resin

CLARIANT FINANCE BVI LTD6 citations74
US5830990ANov 3, 1998

Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists

CLARIANT FINANCE BVI LTD10 citations74
US6121412ASep 19, 2000

Preparation of fractionated novolak resins by a novel extraction technique

CLARIANT FINANCE BVI LTD14 citations73
US5962183AOct 5, 1999

Metal ion reduction in photoresist compositions by chelating ion exchange resin

CLARIANT FINANCE BVI LTD14 citations73
US5853947ADec 29, 1998

Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate

CLARIANT FINANCE BVI LTD7 citations73
US5750031AMay 12, 1998

Process for producing surfactant having a low metal ion level and developer produced therefrom

CLARIANT FINANCE BVI LTD11 citations73
US5739265AApr 14, 1998

Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom

CLARIANT FINANCE BVI LTD13 citations73
US5837417ANov 17, 1998

Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition

CLARIANT FINANCE BVI LTD11 citations72
US5750632AMay 12, 1998

Isolation of novolak resin by low temperature sub surface forced steam distillation

CLARIANT FINANCE BVI LTD9 citations71
US5928836AJul 27, 1999

Fractionated novolak resin copolymer and photoresist composition therefrom

CLARIANT FINANCE BVI LTD11 citations69
US6297352B1Oct 2, 2001

Method of reducing metal ion content of film-forming resins using a liquid/liquid centrifuge

CLARIANT FINANCE BVI LTD2 citations63
US5863700AJan 26, 1999

Isolation of novolak resin without high temperature distillation and photoresist composition therefrom

CLARIANT FINANCE BVI LTD2 citations63
US5853954ADec 29, 1998

Fractionated novolak resin and photoresist composition therefrom

CLARIANT FINANCE BVI LTD5 citations63

HOECHST CELANESE CORP

14 patents
US5580700ADec 3, 1996

Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation

HOECHST CELANESE CORP60 citations96
US5516886AMay 14, 1996

Metal ion reduction in top anti-reflective coatings for photoresists

HOECHST CELANESE CORP21 citations93
US5286606AFeb 15, 1994

Process for producing a developer having a low metal ion level

HOECHST CELANESE CORP32 citations93
US5688893ANov 18, 1997

Method of using a Lewis base to control molecular weight of novolak resins

HOECHST CELANESE CORP18 citations92
US5521052AMay 28, 1996

Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom

HOECHST CELANESE CORP39 citations92
US5476750ADec 19, 1995

Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists

HOECHST CELANESE CORP32 citations92
US5624789AApr 29, 1997

Metal ion reduction in top anti-reflective coatings for photoresisis

HOECHST CELANESE CORP14 citations74
US5614352AMar 25, 1997

Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin

HOECHST CELANESE CORP11 citations74
US5543263AAug 6, 1996

Photoresist having a low level of metal ions

HOECHST CELANESE CORP16 citations74
US5693749ADec 2, 1997

Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom

HOECHST CELANESE CORP11 citations73
US5665517ASep 9, 1997

Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom

HOECHST CELANESE CORP15 citations71
US5371169ADec 6, 1994

Novolak resin mixtures

HOECHST CELANESE CORP12 citations68
US5686561ANov 11, 1997

Metal ion reduction in novolak resin solution using an anion exchange resin

HOECHST CELANESE CORP3 citations63
US5594098AJan 14, 1997

Metal ion reduction in novolak resins and photoresists

HOECHST CELANESE CORP3 citations63

AZ ELECTRONIC MATERIALS USA

13 patents

RAHMAN M DALIL

2 patents

AZ ELECTRONIC MATERIALS LUXEMBOURG SARL

1 patent

YAO HUIRONG

1 patent

MERCK PATENT GMBH

1 patent

Showing the top 50 of 74 patents by PatentIndex Score.