Inventor
RAHMAN M DALIL
US74 patents
⚠️ This page may combine multiple inventors who share the name “RAHMAN M DALIL”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CLARIANT FINANCE BVI LTD
18 patentsUS6447980B1Sep 10, 2002
Photoresist composition for deep UV and process thereof
CLARIANT FINANCE BVI LTD144 citations99
US5981145ANov 9, 1999
Light absorbing polymers
CLARIANT FINANCE BVI LTD59 citations96
US6610465B2Aug 26, 2003
Process for producing film forming resins for photoresist compositions
CLARIANT FINANCE BVI LTD23 citations92
US5994430ANov 30, 1999
Antireflective coating compositions for photoresist compositions and use thereof
CLARIANT FINANCE BVI LTD42 citations92
US6106995AAug 22, 2000
Antireflective coating material for photoresists
CLARIANT FINANCE BVI LTD14 citations74
US6043002AMar 28, 2000
Metal ion reduction in novolak resin solution using an anion exchange resin
CLARIANT FINANCE BVI LTD6 citations74
US5830990ANov 3, 1998
Low metals perfluorooctanoic acid and top anti-reflective coatings for photoresists
CLARIANT FINANCE BVI LTD10 citations74
US6121412ASep 19, 2000
Preparation of fractionated novolak resins by a novel extraction technique
CLARIANT FINANCE BVI LTD14 citations73
US5962183AOct 5, 1999
Metal ion reduction in photoresist compositions by chelating ion exchange resin
CLARIANT FINANCE BVI LTD14 citations73
US5853947ADec 29, 1998
Quinonediazide positive photoresist utilizing mixed solvent consisting essentially of 3-methyl-3-methoxy butanol and propylene glycol alkyl ether acetate
CLARIANT FINANCE BVI LTD7 citations73
US5750031AMay 12, 1998
Process for producing surfactant having a low metal ion level and developer produced therefrom
CLARIANT FINANCE BVI LTD11 citations73
US5739265AApr 14, 1998
Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
CLARIANT FINANCE BVI LTD13 citations73
US5837417ANov 17, 1998
Quinone diazide compositions containing low metals p-cresol oligomers and process of producing the composition
CLARIANT FINANCE BVI LTD11 citations72
US5750632AMay 12, 1998
Isolation of novolak resin by low temperature sub surface forced steam distillation
CLARIANT FINANCE BVI LTD9 citations71
US5928836AJul 27, 1999
Fractionated novolak resin copolymer and photoresist composition therefrom
CLARIANT FINANCE BVI LTD11 citations69
US6297352B1Oct 2, 2001
Method of reducing metal ion content of film-forming resins using a liquid/liquid centrifuge
CLARIANT FINANCE BVI LTD2 citations63
US5863700AJan 26, 1999
Isolation of novolak resin without high temperature distillation and photoresist composition therefrom
CLARIANT FINANCE BVI LTD2 citations63
US5853954ADec 29, 1998
Fractionated novolak resin and photoresist composition therefrom
CLARIANT FINANCE BVI LTD5 citations63
HOECHST CELANESE CORP
14 patentsUS5580700ADec 3, 1996
Metal ion reduction in bottom anti-reflective coatings for use in semiconductor device formation
HOECHST CELANESE CORP60 citations96
US5516886AMay 14, 1996
Metal ion reduction in top anti-reflective coatings for photoresists
HOECHST CELANESE CORP21 citations93
US5286606AFeb 15, 1994
Process for producing a developer having a low metal ion level
HOECHST CELANESE CORP32 citations93
US5688893ANov 18, 1997
Method of using a Lewis base to control molecular weight of novolak resins
HOECHST CELANESE CORP18 citations92
US5521052AMay 28, 1996
Metal ion reduction in novolak resin using an ion exchange catalyst in a polar solvent and photoresists compositions therefrom
HOECHST CELANESE CORP39 citations92
US5476750ADec 19, 1995
Metal ion reduction in the raw materials and using a Lewis base to control molecular weight of novolak resin to be used in positive photoresists
HOECHST CELANESE CORP32 citations92
US5624789AApr 29, 1997
Metal ion reduction in top anti-reflective coatings for photoresisis
HOECHST CELANESE CORP14 citations74
US5614352AMar 25, 1997
Metal ion reduction in novolak resins solution in PGMEA by chelating ion exchange resin
HOECHST CELANESE CORP11 citations74
US5543263AAug 6, 1996
Photoresist having a low level of metal ions
HOECHST CELANESE CORP16 citations74
US5693749ADec 2, 1997
Fractionation of phenol formaldehyde condensate and photoresist compositions produced therefrom
HOECHST CELANESE CORP11 citations73
US5665517ASep 9, 1997
Acidic ion exchange resin as a catalyst to synthesize a novolak resin and photoresist composition therefrom
HOECHST CELANESE CORP15 citations71
US5371169ADec 6, 1994
Novolak resin mixtures
HOECHST CELANESE CORP12 citations68
US5686561ANov 11, 1997
Metal ion reduction in novolak resin solution using an anion exchange resin
HOECHST CELANESE CORP3 citations63
US5594098AJan 14, 1997
Metal ion reduction in novolak resins and photoresists
HOECHST CELANESE CORP3 citations63
AZ ELECTRONIC MATERIALS USA
13 patentsUS6991888B2Jan 31, 2006
Photoresist composition for deep ultraviolet lithography comprising a mixture of photoactive compounds
AZ ELECTRONIC MATERIALS USA84 citations98
US7678528B2Mar 16, 2010
Photoactive compounds
AZ ELECTRONIC MATERIALS USA34 citations93
US7521170B2Apr 21, 2009
Photoactive compounds
AZ ELECTRONIC MATERIALS USA21 citations91
US7358408B2Apr 15, 2008
Photoactive compounds
AZ ELECTRONIC MATERIALS USA14 citations84
US8017296B2Sep 13, 2011
Antireflective coating composition comprising fused aromatic rings
AZ ELECTRONIC MATERIALS USA11 citations82
US7932018B2Apr 26, 2011
Antireflective coating composition
AZ ELECTRONIC MATERIALS USA17 citations82
US7122291B2Oct 17, 2006
Photoresist compositions
AZ ELECTRONIC MATERIALS USA15 citations81
US7989144B2Aug 2, 2011
Antireflective coating composition
AZ ELECTRONIC MATERIALS USA9 citations80
US7390613B1Jun 24, 2008
Photoactive compounds
AZ ELECTRONIC MATERIALS USA16 citations80
US7601480B2Oct 13, 2009
Photoactive compounds
AZ ELECTRONIC MATERIALS USA6 citations74
US7491482B2Feb 17, 2009
Photoactive compounds
AZ ELECTRONIC MATERIALS USA7 citations63
US7189491B2Mar 13, 2007
Photoresist composition for deep UV and process thereof
AZ ELECTRONIC MATERIALS USA3 citations63
US7537879B2May 26, 2009
Photoresist composition for deep UV and process thereof
AZ ELECTRONIC MATERIALS USA3 citations62
RAHMAN M DALIL
2 patentsAZ ELECTRONIC MATERIALS LUXEMBOURG SARL
1 patentYAO HUIRONG
1 patentMERCK PATENT GMBH
1 patentShowing the top 50 of 74 patents by PatentIndex Score.