Inventor
GRIS YVON
FR34 patents
⚠️ This page may combine multiple inventors who share the name “GRIS YVON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
20 patentsUS6319786B1Nov 20, 2001
Self-aligned bipolar transistor manufacturing method
ST MICROELECTRONICS SA21 citations92
US6806536B2Oct 19, 2004
Multiple-function electronic chip
ST MICROELECTRONICS SA7 citations74
US6376322B1Apr 23, 2002
Base-emitter region of a submicronic bipolar transistor
ST MICROELECTRONICS SA9 citations74
US6352907B1Mar 5, 2002
Method for manufacturing bipolar devices with a self-aligned base-emitter junction
ST MICROELECTRONICS SA10 citations74
US6258720B1Jul 10, 2001
Method of formation of conductive lines on integrated circuits
ST MICROELECTRONICS SA10 citations74
US6614114B2Sep 2, 2003
Conductive line formed on integrated circuits
ST MICROELECTRONICS SA2 citations63
US7115933B2Oct 3, 2006
Integrated circuit and fabrication process
ST MICROELECTRONICS SA5 citations62
US7060596B2Jun 13, 2006
Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate
ST MICROELECTRONICS SA2 citations62
US6670657B2Dec 30, 2003
Integrated circuit having photodiode device and associated fabrication process
ST MICROELECTRONICS SA2 citations62
US6537873B2Mar 25, 2003
Integrated circuit comprising a memory cell of the DRAM type, and fabrication process
ST MICROELECTRONICS SA3 citations62
US6689672B2Feb 10, 2004
Buried layer manufacturing method
ST MICROELECTRONICS SA5 citations61
US6607960B2Aug 19, 2003
Bipolar transistor manufacturing method
ST MICROELECTRONICS SA4 citations61
US6506655B1Jan 14, 2003
Bipolar transistor manufacturing method
ST MICROELECTRONICS SA6 citations60
US6165265ADec 26, 2000
Method of deposition of a single-crystal silicon region
ST MICROELECTRONICS SA5 citations59
US6372570B1Apr 16, 2002
Method of formation of a capacitor on an integrated circuit
ST MICROELECTRONICS SA5 citations54
US6989310B2Jan 24, 2006
Process and installation for doping an etched pattern of resistive elements
ST MICROELECTRONICS SA0 citations52
US6607961B1Aug 19, 2003
Method of definition of two self-aligned areas at the upper surface of a substrate
ST MICROELECTRONICS SA1 citations52
US7470585B2Dec 30, 2008
Integrated circuit and fabrication process
ST MICROELECTRONICS SA1 citations51
US7112461B2Sep 26, 2006
Fabrication process for integrated circuit having photodiode device
ST MICROELECTRONICS SA0 citations51
US6864542B2Mar 8, 2005
Bipolar transistor manufacturing method
ST MICROELECTRONICS SA0 citations51
SGS THOMSON MICROELECTRONICS
11 patentsUS5953600ASep 14, 1999
Fabrication of bipolar/CMOS integrated circuits
SGS THOMSON MICROELECTRONICS61 citations96
US6180442B1Jan 30, 2001
Bipolar transistor with an inhomogeneous emitter in a BICMOS integrated circuit method
SGS THOMSON MICROELECTRONICS26 citations92
US6156594ADec 5, 2000
Fabrication of bipolar/CMOS integrated circuits and of a capacitor
SGS THOMSON MICROELECTRONICS37 citations92
US5970333AOct 19, 1999
Dielectric isolation bipolar transistor
SGS THOMSON MICROELECTRONICS24 citations89
US6376883B1Apr 23, 2002
Bipolar transistor and capacitor
SGS THOMSON MICROELECTRONICS9 citations74
US6156616ADec 5, 2000
Method for fabricating an NPN transistor in a BICMOS technology
SGS THOMSON MICROELECTRONICS8 citations74
US5880000AMar 9, 1999
Method for fabricating an NPN transistor of minimum surface
SGS THOMSON MICROELECTRONICS8 citations74
US6432789B2Aug 13, 2002
Method of forming a well isolation bipolar transistor
SGS THOMSON MICROELECTRONICS4 citations63
US6184102B1Feb 6, 2001
Method for manufacturing a well isolation bipolar transistor
SGS THOMSON MICROELECTRONICS4 citations63
US6114743ASep 5, 2000
Well isolation bipolar transistor
SGS THOMSON MICROELECTRONICS2 citations63
US6984872B2Jan 10, 2006
Method for fabricating an NPN transistor in a BICMOS technology
SGS THOMSON MICROELECTRONICS1 citations52