Inventor
JAHNES CHRISTOPHER VINCENT
US35 patents
⚠️ This page may combine multiple inventors who share the name “JAHNES CHRISTOPHER VINCENT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
30 patentsUS6413852B1Jul 2, 2002
Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material
IBM264 citations99
US6140226AOct 31, 2000
Dual damascene processing for semiconductor chip interconnects
IBM363 citations99
US6114937ASep 5, 2000
Integrated circuit spiral inductor
IBM258 citations99
US6054329AApr 25, 2000
Method of forming an integrated circuit spiral inductor with ferromagnetic liner
IBM106 citations99
US5884990AMar 23, 1999
Integrated circuit inductor
IBM320 citations99
US5793272AAug 11, 1998
Integrated circuit toroidal inductor
IBM295 citations99
US8008095B2Aug 30, 2011
Methods for fabricating contacts to pillar structures in integrated circuits
IBM56 citations98
US6448176B1Sep 10, 2002
Dual damascene processing for semiconductor chip interconnects
IBM102 citations98
US6265779B1Jul 24, 2001
Method and material for integration of fuorine-containing low-k dielectrics
IBM139 citations98
US6147009ANov 14, 2000
Hydrogenated oxidized silicon carbon material
IBM641 citations98
US5796166AAug 18, 1998
Tasin oxygen diffusion barrier in multilayer structures
IBM122 citations98
US6815329B2Nov 9, 2004
Multilayer interconnect structure containing air gaps and method for making
IBM105 citations97
US6497963B1Dec 24, 2002
Hydrogenated oxidized silicon carbon material
IBM84 citations97
US6346484B1Feb 12, 2002
Method for selective extraction of sacrificial place-holding material used in fabrication of air gap-containing interconnect structures
IBM80 citations97
US6737725B2May 18, 2004
Multilevel interconnect structure containing air gaps and method for making
IBM70 citations96
US6346747B1Feb 12, 2002
Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made
IBM59 citations96
US5981000ANov 9, 1999
Method for fabricating a thermally stable diamond-like carbon film
IBM55 citations96
US5776823AJul 7, 1998
Tasin oxygen diffusion barrier in multilayer structures
IBM67 citations96
US6448655B1Sep 10, 2002
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
IBM50 citations95
US6030904AFeb 29, 2000
Stabilization of low-k carbon-based dielectrics
IBM53 citations93
US7808798B2Oct 5, 2010
Versatile Si-based packaging with integrated passive components for mmWave applications
IBM27 citations92
US7518229B2Apr 14, 2009
Versatile Si-based packaging with integrated passive components for mmWave applications
IBM31 citations92
US7098476B2Aug 29, 2006
Multilayer interconnect structure containing air gaps and method for making
IBM39 citations92
US6759321B2Jul 6, 2004
Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation
IBM24 citations92
US7943412B2May 17, 2011
Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
IBM24 citations91
US7422983B2Sep 9, 2008
Ta-TaN selective removal process for integrated device fabrication
IBM16 citations91
US6953984B2Oct 11, 2005
Hydrogenated oxidized silicon carbon material
IBM15 citations84
US7192868B2Mar 20, 2007
Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same
IBM7 citations73
US6724086B1Apr 20, 2004
Hydrogenated oxidized silicon carbon material
IBM6 citations73
US6214482B1Apr 10, 2001
Dielectric-layer for magneto-optic storage media structures
IBM4 citations56