Inventor
KRUMREY JOACHIM
DE25 patents
⚠️ This page may combine multiple inventors who share the name “KRUMREY JOACHIM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AUSTRIA
8 patentsUS8022474B2Sep 20, 2011
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA34 citations96
US7598143B2Oct 6, 2009
Method for producing an integrated circuit with a trench transistor structure
INFINEON TECHNOLOGIES AUSTRIA22 citations92
US9202909B2Dec 1, 2015
Power MOSFET semiconductor
INFINEON TECHNOLOGIES AUSTRIA4 citations84
US7465987B2Dec 16, 2008
Field electrode trench transistor structure with voltage divider
INFINEON TECHNOLOGIES AUSTRIA16 citations84
US7943955B2May 17, 2011
Monolithic semiconductor switches and method for manufacturing
INFINEON TECHNOLOGIES AUSTRIA13 citations83
US7859051B2Dec 28, 2010
Semiconductor device with a reduced band gap and process
INFINEON TECHNOLOGIES AUSTRIA6 citations73
US8362551B2Jan 29, 2013
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA4 citations60
US8044459B2Oct 25, 2011
Semiconductor device with trench field plate including first and second semiconductor materials
INFINEON TECHNOLOGIES AUSTRIA0 citations51
INFINEON TECHNOLOGIES AG
6 patentsUS6998678B2Feb 14, 2006
Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diode
INFINEON TECHNOLOGIES AG69 citations98
US6806533B2Oct 19, 2004
Semiconductor component with an increased breakdown voltage in the edge area
INFINEON TECHNOLOGIES AG83 citations98
US6690062B2Feb 10, 2004
Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance
INFINEON TECHNOLOGIES AG119 citations98
US7005351B2Feb 28, 2006
Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration
INFINEON TECHNOLOGIES AG113 citations97
US7091573B2Aug 15, 2006
Power transistor
INFINEON TECHNOLOGIES AG62 citations96
US6891223B2May 10, 2005
Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell
INFINEON TECHNOLOGIES AG52 citations92
HAEBERLEN OLIVER
3 patentsUS8618598B2Dec 31, 2013
Power MOSFET semiconductor device
HAEBERLEN OLIVER12 citations92
US8193559B2Jun 5, 2012
Monolithic semiconductor switches and method for manufacturing
HAEBERLEN OLIVER26 citations89
US8946767B2Feb 3, 2015
Monolithic semiconductor switches and method for manufacturing
HAEBERLEN OLIVER2 citations61