P

Inventor

YANG NIAN

US87 patents
⚠️ This page may combine multiple inventors who share the name “YANG NIAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

28 patents
US6570787B1May 27, 2003

Programming with floating source for low power, low leakage and high density flash memory devices

ADVANCED MICRO DEVICES INC85 citations98
US6461905B1Oct 8, 2002

Dummy gate process to reduce the Vss resistance of flash products

ADVANCED MICRO DEVICES INC80 citations97
US6660588B1Dec 9, 2003

High density floating gate flash memory and fabrication processes therefor

ADVANCED MICRO DEVICES INC50 citations96
US6643185B1Nov 4, 2003

Method for repairing over-erasure of fast bits on floating gate memory devices

ADVANCED MICRO DEVICES INC55 citations96
US6828623B1Dec 7, 2004

Floating gate memory device with homogeneous oxynitride tunneling dielectric

ADVANCED MICRO DEVICES INC36 citations93
US6825526B1Nov 30, 2004

Structure for increasing drive current in a memory array and related method

ADVANCED MICRO DEVICES INC20 citations93
US6812514B1Nov 2, 2004

High density floating gate flash memory and fabrication processes therefor

ADVANCED MICRO DEVICES INC19 citations93
US6606273B1Aug 12, 2003

Methods and systems for flash memory tunnel oxide reliability testing

ADVANCED MICRO DEVICES INC46 citations93
US6991987B1Jan 31, 2006

Method for producing a low defect homogeneous oxynitride

ADVANCED MICRO DEVICES INC15 citations84
US6825684B1Nov 30, 2004

Hot carrier oxide qualification method

ADVANCED MICRO DEVICES INC14 citations84
US6797650B1Sep 28, 2004

Flash memory devices with oxynitride dielectric as the charge storage media

ADVANCED MICRO DEVICES INC14 citations84
US6784061B1Aug 31, 2004

Process to improve the Vss line formation for high density flash memory and related structure associated therewith

ADVANCED MICRO DEVICES INC14 citations84
US6717850B1Apr 6, 2004

Efficient method to detect process induced defects in the gate stack of flash memory devices

ADVANCED MICRO DEVICES INC14 citations84
US6646462B1Nov 11, 2003

Extraction of drain junction overlap with the gate and the channel length for ultra-small CMOS devices with ultra-thin gate oxides

ADVANCED MICRO DEVICES INC13 citations84
US6486682B1Nov 26, 2002

Determination of dielectric constants of thin dielectric materials in a MOS (metal oxide semiconductor) stack

ADVANCED MICRO DEVICES INC14 citations84
US6963506B1Nov 8, 2005

Circuit and technique for accurately sensing low voltage flash memory devices

ADVANCED MICRO DEVICES INC8 citations74
US6859748B1Feb 22, 2005

Test structure for measuring effect of trench isolation on oxide in a memory device

ADVANCED MICRO DEVICES INC7 citations74
US6777957B1Aug 17, 2004

Test structure to measure interlayer dielectric effects and breakdown and detect metal defects in flash memories

ADVANCED MICRO DEVICES INC8 citations74
US6764920B1Jul 20, 2004

Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devices

ADVANCED MICRO DEVICES INC10 citations74
US6756806B1Jun 29, 2004

Method of determining location of gate oxide breakdown of MOSFET by measuring currents

ADVANCED MICRO DEVICES INC10 citations74
US6734080B1May 11, 2004

Semiconductor isolation material deposition system and method

ADVANCED MICRO DEVICES INC8 citations74
US6734028B1May 11, 2004

Method of detecting shallow trench isolation corner thinning by electrical stress

ADVANCED MICRO DEVICES INC9 citations74
US6642106B1Nov 4, 2003

Method for increasing core gain in flash memory device using strained silicon

ADVANCED MICRO DEVICES INC11 citations74
US6593590B1Jul 15, 2003

Test structure apparatus for measuring standby current in flash memory devices

ADVANCED MICRO DEVICES INC10 citations74
US6590260B1Jul 8, 2003

Memory device having improved programmability

ADVANCED MICRO DEVICES INC9 citations74
US6472236B1Oct 29, 2002

Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack

ADVANCED MICRO DEVICES INC12 citations74
US6696331B1Feb 24, 2004

Method of protecting a stacked gate structure during fabrication

ADVANCED MICRO DEVICES INC12 citations73
US6596586B1Jul 22, 2003

Method of forming low resistance common source line for flash memory devices

ADVANCED MICRO DEVICES INC8 citations71

SPANSION LLC

13 patents
US7042766B1May 9, 2006

Method of programming a flash memory device using multilevel charge storage

SPANSION LLC128 citations98
US7724075B2May 25, 2010

Method to provide a higher reference voltage at a lower power supply in flash memory devices

SPANSION LLC27 citations93
US6987696B1Jan 17, 2006

Method of improving erase voltage distribution for a flash memory array having dummy wordlines

SPANSION LLC38 citations93
US7957204B1Jun 7, 2011

Flash memory programming power reduction

SPANSION LLC18 citations92
US7345916B2Mar 18, 2008

Method and apparatus for high voltage operation for a high performance semiconductor memory device

SPANSION LLC29 citations92
US7632749B1Dec 15, 2009

Semiconductor device having a pad metal layer and a lower metal layer that are electrically coupled, whereas apertures are formed in the lower metal layer below a center area of the pad metal layer

SPANSION LLC11 citations84
US7505298B2Mar 17, 2009

Transfer of non-associated information on flash memory devices

SPANSION LLC13 citations84
US7352626B1Apr 1, 2008

Voltage regulator with less overshoot and faster settling time

SPANSION LLC16 citations84
US7532518B2May 12, 2009

Compensation method to achieve uniform programming speed of flash memory devices

SPANSION LLC8 citations83
US7042767B2May 9, 2006

Flash memory unit and method of programming a flash memory device

SPANSION LLC10 citations74
US7626882B2Dec 1, 2009

Flash memory device with external high voltage supply

SPANSION LLC7 citations73
US7433228B2Oct 7, 2008

Multi-bit flash memory device having improved program rate

SPANSION LLC7 citations73
US7260014B1Aug 21, 2007

Voltage supply circuit for memory array programming

SPANSION LLC2 citations63

WESTERN DIGITAL TECH INC

4 patents

SANDISK TECHNOLOGIES INC

3 patents

IYUNTIAN CO LTD

1 patent

FASL LLC

1 patent

Showing the top 50 of 87 patents by PatentIndex Score.