P

Inventor

KAMEI KOJI

JP41 patents
⚠️ This page may combine multiple inventors who share the name “KAMEI KOJI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SHOWA DENKO KK

18 patents
US7741653B2Jun 22, 2010

Gallium nitride-based compound semiconductor light-emitting device

SHOWA DENKO KK21 citations92
US8049243B2Nov 1, 2011

Gallium nitride-based compound semiconductor light emitting device

SHOWA DENKO KK11 citations82
US11320388B2May 3, 2022

SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor

SHOWA DENKO KK4 citations72
US11293115B2Apr 5, 2022

Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less

SHOWA DENKO KK5 citations72
US7952116B2May 31, 2011

Gallium nitride-based compound semiconductor light-emitting device

SHOWA DENKO KK5 citations63
US7759690B2Jul 20, 2010

Gallium nitride-based compound semiconductor light-emitting device

SHOWA DENKO KK5 citations63
US7544974B2Jun 9, 2009

Positive electrode for compound semiconductor light-emitting device

SHOWA DENKO KK5 citations63
US7452740B2Nov 18, 2008

Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof

SHOWA DENKO KK4 citations63
US11961736B2Apr 16, 2024

SiC epitaxial wafer, production method therefor, and defect identification method

SHOWA DENKO KK0 citations62
US11705329B2Jul 18, 2023

SiC epitaxial wafer and method for manufacturing same

SHOWA DENKO KK0 citations62
US11315839B2Apr 26, 2022

Evaluation method and manufacturing method of SiC epitaxial wafer

SHOWA DENKO KK1 citations62
US11249027B2Feb 15, 2022

SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer

SHOWA DENKO KK0 citations62
US10985042B2Apr 20, 2021

SiC substrate, SiC epitaxial wafer, and method of manufacturing the same

SHOWA DENKO KK0 citations62
US10955350B2Mar 23, 2021

SiC wafer defect measuring method, reference sample, and method of manufacturing SiC epitaxial wafer

SHOWA DENKO KK1 citations62
US10865500B2Dec 15, 2020

SiC epitaxial wafer and method for manufacturing SiC epitaxial wafer

SHOWA DENKO KK1 citations60
US7518163B2Apr 14, 2009

Gallium nitride-based compound semiconductor light-emitting device and negative electrode thereof

SHOWA DENKO KK0 citations52
US10697898B2Jun 30, 2020

SiC substrate evaluation method and method for manufacturing SiC epitaxial wafer

SHOWA DENKO KK0 citations51
US7875896B2Jan 25, 2011

Transparent positive electrode

SHOWA DENKO KK1 citations50

NEC TOKIN CORP

8 patents

TOKIN CORP

5 patents

KAMEI KOJI

3 patents

TOTO LTD

2 patents

ORIJI GAKU

1 patent

ADVANCED TELECOMMUNICATIONS RES INSTITUTE INTERNATIONAL

1 patent

RESONAC CORP

1 patent

KAO CORP

1 patent

YOSHIDA HIROYUKI

1 patent