Inventor
PARK CHANG-SOO
KR98 patents
⚠️ This page may combine multiple inventors who share the name “PARK CHANG-SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
39 patentsUS6754473B1Jun 22, 2004
Apparatus and method for providing closed-loop transmit antenna diversity in a mobile communication system
SAMSUNG ELECTRONICS CO LTD156 citations99
US6397367B1May 28, 2002
Device and methods for channel coding and rate matching in a communication system
SAMSUNG ELECTRONICS CO LTD181 citations99
US6270572B1Aug 7, 2001
Method for manufacturing thin film using atomic layer deposition
SAMSUNG ELECTRONICS CO LTD1,052 citations99
US6207487B1Mar 27, 2001
Method for forming dielectric film of capacitor having different thicknesses partly
SAMSUNG ELECTRONICS CO LTD426 citations99
US6197683B1Mar 6, 2001
Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
SAMSUNG ELECTRONICS CO LTD316 citations99
US6174809B1Jan 16, 2001
Method for forming metal layer using atomic layer deposition
SAMSUNG ELECTRONICS CO LTD1,166 citations99
US6166667ADec 26, 2000
Selection of turbo or non-turbo error correction codes based on data type or length
SAMSUNG ELECTRONICS CO LTD144 citations99
US6144060ANov 7, 2000
Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature
SAMSUNG ELECTRONICS CO LTD457 citations99
US6963540B2Nov 8, 2005
Apparatus and method for assigning a common packet channel in a CDMA communication system
SAMSUNG ELECTRONICS CO LTD148 citations98
US6747963B1Jun 8, 2004
Apparatus and method for gated transmission in a CDMA communication system
SAMSUNG ELECTRONICS CO LTD133 citations98
US6512931B1Jan 28, 2003
Power control device and method for reverse link common channel in mobile communication system
SAMSUNG ELECTRONICS CO LTD118 citations98
US6400703B1Jun 4, 2002
Device and method for generating and distributing coded symbols in a CDMA communication system
SAMSUNG ELECTRONICS CO LTD98 citations98
US6385437B1May 7, 2002
Power control apparatus and method for inter-frequency handoff in CDMA communication system
SAMSUNG ELECTRONICS CO LTD83 citations98
US6335240B1Jan 1, 2002
Capacitor for a semiconductor device and method for forming the same
SAMSUNG ELECTRONICS CO LTD468 citations98
US6289486B1Sep 11, 2001
Adaptive channel encoding method and device
SAMSUNG ELECTRONICS CO LTD144 citations98
US5534463AJul 9, 1996
Method for forming a wiring layer
SAMSUNG ELECTRONICS CO LTD103 citations98
US6489214B2Dec 3, 2002
Method for forming a capacitor of a semiconductor device
SAMSUNG ELECTRONICS CO LTD56 citations96
US5869902AFeb 9, 1999
Semiconductor device and manufacturing method thereof
SAMSUNG ELECTRONICS CO LTD39 citations96
US5589713ADec 31, 1996
Semiconductor device having an improved wiring layer
SAMSUNG ELECTRONICS CO LTD48 citations96
US7835281B2Nov 16, 2010
Method and system for allocating resources in a communication system
SAMSUNG ELECTRONICS CO LTD51 citations94
US5892254AApr 6, 1999
Integrated circuit capacitors including barrier layers having grain boundary filling material
SAMSUNG ELECTRONICS CO LTD64 citations94
US5266521ANov 30, 1993
Method for forming a planarized composite metal layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD66 citations94
US7006482B1Feb 28, 2006
Apparatus and method for gating data on a control channel in a CDMA communication system
SAMSUNG ELECTRONICS CO LTD38 citations93
US6674807B1Jan 6, 2004
Communication apparatus and method for a CDMA communication system
SAMSUNG ELECTRONICS CO LTD22 citations93
US6516441B1Feb 4, 2003
Device and method for transmitting subframe in mobile communication system
SAMSUNG ELECTRONICS CO LTD22 citations93
US6437714B1Aug 20, 2002
Channel encoding device and method for communication system
SAMSUNG ELECTRONICS CO LTD45 citations93
US5960320ASep 28, 1999
Metal wiring layer forming method for semiconductor device
SAMSUNG ELECTRONICS CO LTD27 citations93
US5318923AJun 7, 1994
Method for forming a metal wiring layer in a semiconductor device
SAMSUNG ELECTRONICS CO LTD52 citations93
US6928604B2Aug 9, 2005
Turbo encoding/decoding device and method for processing frame data according to QoS
SAMSUNG ELECTRONICS CO LTD16 citations92
US6920602B1Jul 19, 2005
Turbo encoding/decoding device and method for processing frame data according to QoS
SAMSUNG ELECTRONICS CO LTD24 citations92
US6885653B2Apr 26, 2005
Apparatus and method for allocating channel using OVSF code for uplink synchronous transmission scheme in a W-CDMA communication system
SAMSUNG ELECTRONICS CO LTD53 citations92
US6487693B1Nov 26, 2002
Channel encoding/decoding in communication system
SAMSUNG ELECTRONICS CO LTD30 citations92
US6374386B1Apr 16, 2002
Device and method for inserting previously known bits in input stage of channel encoder
SAMSUNG ELECTRONICS CO LTD43 citations92
US6013576AJan 11, 2000
Methods for forming an amorphous tantalum nitride film
SAMSUNG ELECTRONICS CO LTD20 citations92
US6490267B1Dec 3, 2002
Device and method for generating spreading code and spreading channel signals using spreading code in a CDMA communication system
SAMSUNG ELECTRONICS CO LTD24 citations91
US6180447B1Jan 30, 2001
Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material
SAMSUNG ELECTRONICS CO LTD40 citations91
US9151711B2Oct 6, 2015
Optoelectronic shutter, method of operating the same and optical apparatus including the optoelectronic shutter
SAMSUNG ELECTRONICS CO LTD9 citations84
USRE41498EAug 10, 2010
Device and methods for channel coding and rate matching in a communication system
SAMSUNG ELECTRONICS CO LTD10 citations84
US7633863B2Dec 15, 2009
Apparatus and method for scheduling data in a communication system
SAMSUNG ELECTRONICS CO LTD19 citations84
HYNIX SEMICONDUCTOR INC
3 patentsUS7838440B2Nov 23, 2010
Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines
HYNIX SEMICONDUCTOR INC30 citations93
US7851285B2Dec 14, 2010
Non-volatile memory device and method for fabricating the same
HYNIX SEMICONDUCTOR INC14 citations84
US7135403B2Nov 14, 2006
Method for forming metal interconnection line in semiconductor device
HYNIX SEMICONDUCTOR INC12 citations84
JUSUNG ENG CO LTD
2 patentsUS6723595B2Apr 20, 2004
Thin film deposition method including using atomic layer deposition without purging between introducing the gaseous reactants
JUSUNG ENG CO LTD74 citations98
US6656284B1Dec 2, 2003
Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same
JUSUNG ENG CO LTD46 citations92
KOREA ELECTRONICS TELECOMM
2 patentsCHO YONG-CHUL
2 patentsSAMSUNG ELECTRO MECH
1 patentPARK YONG-HWA
1 patentShowing the top 50 of 98 patents by PatentIndex Score.