Inventor
ZHUANG HAOREN
JP37 patents
⚠️ This page may combine multiple inventors who share the name “ZHUANG HAOREN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
21 patentsUS7598174B1Oct 6, 2009
Feature patterning methods
INFINEON TECHNOLOGIES AG26 citations92
US7115522B2Oct 3, 2006
Method for manufacturing semiconductor device
INFINEON TECHNOLOGIES AG23 citations92
US7071506B2Jul 4, 2006
Device for inhibiting hydrogen damage in ferroelectric capacitor devices
INFINEON TECHNOLOGIES AG9 citations73
US7041551B2May 9, 2006
Device and a method for forming a capacitor device
INFINEON TECHNOLOGIES AG9 citations73
US6762064B1Jul 13, 2004
Process for fabrication of a ferrocapacitor
INFINEON TECHNOLOGIES AG8 citations73
US8349528B2Jan 8, 2013
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG2 citations62
US8039203B2Oct 18, 2011
Integrated circuits and methods of design and manufacture thereof
INFINEON TECHNOLOGIES AG3 citations62
US7794903B2Sep 14, 2010
Metrology systems and methods for lithography processes
INFINEON TECHNOLOGIES AG1 citations62
US7759235B2Jul 20, 2010
Semiconductor device manufacturing methods
INFINEON TECHNOLOGIES AG5 citations62
US7674350B2Mar 9, 2010
Feature dimension control in a manufacturing process
INFINEON TECHNOLOGIES AG2 citations62
US6924156B2Aug 2, 2005
Method for forming a ferroelectric capacitor device
INFINEON TECHNOLOGIES AG3 citations62
US6897501B2May 24, 2005
Avoiding shorting in capacitors
INFINEON TECHNOLOGIES AG4 citations61
US8007985B2Aug 30, 2011
Semiconductor devices and methods of manufacturing thereof
INFINEON TECHNOLOGIES AG0 citations52
US7842579B2Nov 30, 2010
Method for manufacturing a semiconductor device having doped and undoped polysilicon layers
INFINEON TECHNOLOGIES AG0 citations51
US7316980B2Jan 8, 2008
Method for forming ferrocapacitors and FeRAM devices
INFINEON TECHNOLOGIES AG1 citations51
US7098142B2Aug 29, 2006
Method of etching ferroelectric devices
INFINEON TECHNOLOGIES AG1 citations51
US7001781B2Feb 21, 2006
Method for producing a ferroelectric capacitor that includes etching with hardmasks
INFINEON TECHNOLOGIES AG0 citations51
US6867053B2Mar 15, 2005
Fabrication of a FeRAM capacitor using a noble metal hardmask
INFINEON TECHNOLOGIES AG0 citations51
US6785119B2Aug 31, 2004
Ferroelectric capacitor and process for its manufacture
INFINEON TECHNOLOGIES AG0 citations51
US6734057B2May 11, 2004
Method of patterning capacitors and capacitors made thereby
INFINEON TECHNOLOGIES AG1 citations51
US7645663B2Jan 12, 2010
Method of producing non volatile memory device
INFINEON TECHNOLOGIES AG1 citations46
TOSHIBA KK
4 patentsUS7015049B2Mar 21, 2006
Fence-free etching of iridium barrier having a steep taper angle
TOSHIBA KK11 citations83
US7042705B2May 9, 2006
Sidewall structure and method of fabrication for reducing oxygen diffusion to contact plugs during CW hole reactive ion etch processing
TOSHIBA KK3 citations62
US7045837B2May 16, 2006
Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing
TOSHIBA KK5 citations59
US7001780B2Feb 21, 2006
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method
TOSHIBA KK0 citations51
GLOBALFOUNDRIES INC
2 patentsZHUANG HAOREN
2 patentsSAMSUNG ELECTRONICS CO LTD
2 patentsUS7541290B2Jun 2, 2009
Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing
SAMSUNG ELECTRONICS CO LTD1 citations48
US7541234B2Jun 2, 2009
Methods of fabricating integrated circuit transistors by simultaneously removing a photoresist layer and a carbon-containing layer on different active areas
SAMSUNG ELECTRONICS CO LTD0 citations41