P

Inventor

ZHUANG HAOREN

JP37 patents
⚠️ This page may combine multiple inventors who share the name “ZHUANG HAOREN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

21 patents
US7598174B1Oct 6, 2009

Feature patterning methods

INFINEON TECHNOLOGIES AG26 citations92
US7115522B2Oct 3, 2006

Method for manufacturing semiconductor device

INFINEON TECHNOLOGIES AG23 citations92
US7071506B2Jul 4, 2006

Device for inhibiting hydrogen damage in ferroelectric capacitor devices

INFINEON TECHNOLOGIES AG9 citations73
US7041551B2May 9, 2006

Device and a method for forming a capacitor device

INFINEON TECHNOLOGIES AG9 citations73
US6762064B1Jul 13, 2004

Process for fabrication of a ferrocapacitor

INFINEON TECHNOLOGIES AG8 citations73
US8349528B2Jan 8, 2013

Semiconductor devices and methods of manufacturing thereof

INFINEON TECHNOLOGIES AG2 citations62
US8039203B2Oct 18, 2011

Integrated circuits and methods of design and manufacture thereof

INFINEON TECHNOLOGIES AG3 citations62
US7794903B2Sep 14, 2010

Metrology systems and methods for lithography processes

INFINEON TECHNOLOGIES AG1 citations62
US7759235B2Jul 20, 2010

Semiconductor device manufacturing methods

INFINEON TECHNOLOGIES AG5 citations62
US7674350B2Mar 9, 2010

Feature dimension control in a manufacturing process

INFINEON TECHNOLOGIES AG2 citations62
US6924156B2Aug 2, 2005

Method for forming a ferroelectric capacitor device

INFINEON TECHNOLOGIES AG3 citations62
US6897501B2May 24, 2005

Avoiding shorting in capacitors

INFINEON TECHNOLOGIES AG4 citations61
US8007985B2Aug 30, 2011

Semiconductor devices and methods of manufacturing thereof

INFINEON TECHNOLOGIES AG0 citations52
US7842579B2Nov 30, 2010

Method for manufacturing a semiconductor device having doped and undoped polysilicon layers

INFINEON TECHNOLOGIES AG0 citations51
US7316980B2Jan 8, 2008

Method for forming ferrocapacitors and FeRAM devices

INFINEON TECHNOLOGIES AG1 citations51
US7098142B2Aug 29, 2006

Method of etching ferroelectric devices

INFINEON TECHNOLOGIES AG1 citations51
US7001781B2Feb 21, 2006

Method for producing a ferroelectric capacitor that includes etching with hardmasks

INFINEON TECHNOLOGIES AG0 citations51
US6867053B2Mar 15, 2005

Fabrication of a FeRAM capacitor using a noble metal hardmask

INFINEON TECHNOLOGIES AG0 citations51
US6785119B2Aug 31, 2004

Ferroelectric capacitor and process for its manufacture

INFINEON TECHNOLOGIES AG0 citations51
US6734057B2May 11, 2004

Method of patterning capacitors and capacitors made thereby

INFINEON TECHNOLOGIES AG1 citations51
US7645663B2Jan 12, 2010

Method of producing non volatile memory device

INFINEON TECHNOLOGIES AG1 citations46

TOSHIBA KK

4 patents

GLOBALFOUNDRIES INC

2 patents

ZHUANG HAOREN

2 patents

SAMSUNG ELECTRONICS CO LTD

2 patents

SARMA CHANDRASEKHAR

2 patents

TDK CORP

1 patent

GUTMANN ALOIS

1 patent

HAN JIN-PING

1 patent

LEE HYUNG-RAE

1 patent