Inventor
BRUCHHAUS RAINER
JP35 patents
⚠️ This page may combine multiple inventors who share the name “BRUCHHAUS RAINER”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
25 patentsUS6300652B1Oct 9, 2001
Memory cell configuration and method for its production
INFINEON TECHNOLOGIES AG27 citations92
US6800890B1Oct 5, 2004
Memory architecture with series grouped by cells
INFINEON TECHNOLOGIES AG14 citations83
US6746877B1Jun 8, 2004
Encapsulation of ferroelectric capacitors
INFINEON TECHNOLOGIES AG14 citations83
US6573542B2Jun 3, 2003
Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layer
INFINEON TECHNOLOGIES AG18 citations83
US7041551B2May 9, 2006
Device and a method for forming a capacitor device
INFINEON TECHNOLOGIES AG9 citations73
US6858492B2Feb 22, 2005
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG8 citations73
US6773986B2Aug 10, 2004
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG10 citations73
US6815234B2Nov 9, 2004
Reducing stress in integrated circuits
INFINEON TECHNOLOGIES AG8 citations70
US7361549B2Apr 22, 2008
Method for fabricating memory cells for a memory device
INFINEON TECHNOLOGIES AG3 citations63
US7348619B2Mar 25, 2008
Ferroelectric memory arrangement
INFINEON TECHNOLOGIES AG4 citations63
US6316802B1Nov 13, 2001
Easy to manufacture integrated semiconductor memory configuration with platinum electrodes
INFINEON TECHNOLOGIES AG5 citations63
US7199002B2Apr 3, 2007
Process for fabrication of a ferroelectric capacitor
INFINEON TECHNOLOGIES AG5 citations62
US6940111B2Sep 6, 2005
Radiation protection in integrated circuits
INFINEON TECHNOLOGIES AG5 citations62
US6839220B1Jan 4, 2005
Multi-layer barrier allowing recovery anneal for ferroelectric capacitors
INFINEON TECHNOLOGIES AG2 citations62
US6346424B1Feb 12, 2002
Process for producing high-epsilon dielectric layer or ferroelectric layer
INFINEON TECHNOLOGIES AG6 citations62
US7522444B2Apr 21, 2009
Memory circuit, method for operating a memory circuit, memory device and method for producing a memory device
INFINEON TECHNOLOGIES AG0 citations52
US7378700B2May 27, 2008
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US7316980B2Jan 8, 2008
Method for forming ferrocapacitors and FeRAM devices
INFINEON TECHNOLOGIES AG1 citations51
US7198959B2Apr 3, 2007
Process for fabrication of a ferrocapacitor
INFINEON TECHNOLOGIES AG1 citations51
US7098142B2Aug 29, 2006
Method of etching ferroelectric devices
INFINEON TECHNOLOGIES AG1 citations51
US7061035B2Jun 13, 2006
Self-aligned V0-contact for cell size reduction
INFINEON TECHNOLOGIES AG1 citations51
US6867053B2Mar 15, 2005
Fabrication of a FeRAM capacitor using a noble metal hardmask
INFINEON TECHNOLOGIES AG0 citations51
US6704219B2Mar 9, 2004
FeRAM memory and method for manufacturing it
INFINEON TECHNOLOGIES AG1 citations51
US7183121B2Feb 27, 2007
Process for fabrication of a ferrocapacitor
INFINEON TECHNOLOGIES AG0 citations41
US6818503B2Nov 16, 2004
Method for fabricating a semiconductor memory device
INFINEON TECHNOLOGIES AG0 citations41
SIEMENS AG
6 patentsUS6108191AAug 22, 2000
Multilayer capacitor with high specific capacitance and production process therefor
SIEMENS AG141 citations96
US5684302ANov 4, 1997
Pyrodetector element having a pyroelectric layer produced by oriented growth, and method for the fabrication of the element
SIEMENS AG48 citations92
US5403752AApr 4, 1995
Method for manufacturing a pyrodetector apparatus
SIEMENS AG25 citations92
US6139971AOct 31, 2000
Stratified structure with a ferroelectric layer and process for producing the same
SIEMENS AG23 citations91
US5939722AAug 17, 1999
Semiconductor detector for infrared radiation and method for manufacturing same
SIEMENS AG17 citations84
US6440210B1Aug 27, 2002
Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure
SIEMENS AG10 citations71