Inventor

LIN HUANG-HSUAN

TW2 patents

Patents

2 patents

US12396234B2Aug 19, 2025

Method for forming semiconductor device structure with a cap layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations56

US12446261B2Oct 14, 2025

Multi-gate devices and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations46