Inventor

GILL HARDAYAL SINGH

US280 patents

⚠️ This page may combine multiple inventors who share the name “GILL HARDAYAL SINGH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

GILL HARDAYAL SINGH

IBM

Read head with dual tunnel junction sensor

Tunnel junction head structure without current shunting

Low moment/high coercivity pinned layer for magnetic tunnel junction sensors

Spin valve sensor with antiparallel magnetization of pinned layers

GMR design with nano oxide layer in the second anti-parallel pinned layer

Magnetic tunnel junction head structure with insulating antiferromagnetic layer

Tunnel junction structure with junction layer embedded in amorphous ferromagnetic layers

Double tunnel junction with magnetoresistance enhancement layer

Ultra high density GMR sensor

Differential spin valve sensor structure

Pinned layer structure for a spin valve sensor having cobalt iron (CoFe) and cobalt iron oxide (CoFeO) laminated layers

Giant magnetoresistive sensor with an AP-coupled low Hk free layer

Magnetic head shield structure having high magnetic stability

Dual spin valve sensor read head with a specular reflector film embedded in each antiparallel (AP) pinned layer next to a spacer layer

Low uniaxial anisotropy cobalt iron (COFE) free layer structure for GMR and tunnel junction heads

Read head spin valve sensor with triple antiparallel coupled free layer structure

Dual spin valve sensor with self-pinned layer specular reflector

Dual tunnel junction sensor with a single antiferromagnetic layer

Disk drive with thermal asperity reduction circuitry using a magnetic tunnel junction sensor

Antiparallel (AP) pinned spin valve sensor with specular reflection of conduction electrons

Antiparallel (AP) pinned spin valve sensor with giant magnetoresistive (GMR) enhancing layer

Tunnel junction structure with FeX ferromagnetic layers

Anti-parallel-pinned spin valve sensor with minimal pinned layer shunting

Antiparallel pinned spin valve sensor with read signal symmetry

Spin valve sensor with two spun values separated by an insulated current conductor

Disk drive with a thermal asperity reduction circuitry using a spin valve sensor

Resettable symmetric spin valve

Spin valve sensor with enhanced magnetoresistance

Highly sensitive orthogonal spin valve read head

Magnetizations of pinned and free layers of a spin valve sensor set by sense current fields

HITACHI GLOBAL STORAGE TECH

Magnetic tunnel transistor with high magnetocurrent and stronger pinning

Laminated side shield for perpendicular write head for improved performance

Magnetoresistive sensor having improved synthetic free layer

Method for providing a self-pinned differential GMR sensor having a bias structure comprising layers of ferromagnetic and non-magnetic material selected to provide a net-zero magnetic moment

Current perpendicular to plane (CPP) magnetoresistive sensor having a flux guide structure and synthetic free layer

Shield stabilization for magnetoresistive sensors

Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip

CPP GMR/TMR structure providing higher dR

Sensor with in-stack bias structure providing enhanced magnetostatic stabilization

CPP sensor having hard bias stabilization placed at back edge of the stripe

Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads

Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping

Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors

Self-pinned double tunnel junction head

Apparatus for extended self-pinned layer for a current perpendicular to plane head

CPP differential GMR sensor having antiparallel stabilized free layers for perpendicular recording

High HC reference layer structure for self-pinned GMR heads

GILL HARDAYAL SINGH

Magnetic tunnel transistor with high magnetocurrent

(unassigned)

Shield structure with a heat sink layer for dissipating heat from a read sensor

HITACHI GLOBAL STORAGE TECH NL

Current perpendicular to plane magnetoresistive sensor with reduced read gap