Inventor
ITO FUMINORI
JP25 patents
⚠️ This page may combine multiple inventors who share the name “ITO FUMINORI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
NEC CORP
10 patentsUS7701060B2Apr 20, 2010
Wiring structure and method for manufacturing the same
NEC CORP20 citations92
US7161285B2Jan 9, 2007
CNT film and field-emission cold cathode comprising the same
NEC CORP26 citations92
US6236156B1May 22, 2001
Micro vacuum pump for maintaining high degree of vacuum and apparatus including the same
NEC CORP26 citations92
US8043957B2Oct 25, 2011
Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor
NEC CORP6 citations74
US7264978B2Sep 4, 2007
Field emission type cold cathode and method of manufacturing the cold cathode
NEC CORP8 citations73
US6114694ASep 5, 2000
Device having field emission type cold cathode and vacuum tank exhausting method and system in the same
NEC CORP11 citations73
US5938495AAug 17, 1999
Method of manufacturing a field emission cold cathode capable of stably producing a high emission current
NEC CORP11 citations73
US5825134AOct 20, 1998
Method of holding field emission cathode in its standby state
NEC CORP8 citations73
US8039921B2Oct 18, 2011
Wiring structure, semiconductor device and manufacturing method thereof
NEC CORP2 citations62
US6340425B2Jan 22, 2002
Method of manufacturing cold cathode device having porous emitter
NEC CORP4 citations62
KITAGAWA IND CO LTD
4 patentsITO FUMINORI
3 patentsUS8592283B2Nov 26, 2013
Wiring structure, semiconductor device and manufacturing method thereof
ITO FUMINORI6 citations82
US8133821B2Mar 13, 2012
Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device
ITO FUMINORI2 citations61
US8937023B2Jan 20, 2015
Method of manufacturing porous insulating film
ITO FUMINORI0 citations50
RENESAS ELECTRONICS CORP
3 patentsUS9236430B2Jan 12, 2016
Porous insulation film, and a semiconductor device including such porous insulation film
RENESAS ELECTRONICS CORP0 citations52
US9034740B2May 19, 2015
Method for manufacturing a porous insulation film and a method for manufacturing a semiconductor device comprising a porous insulation film
RENESAS ELECTRONICS CORP0 citations52
US8377823B2Feb 19, 2013
Semiconductor device including porous layer covered by poreseal layer
RENESAS ELECTRONICS CORP0 citations52