Inventor
BEZ ROBERTO
IT40 patents
⚠️ This page may combine multiple inventors who share the name “BEZ ROBERTO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SRL
15 patentsUS7012832B1Mar 14, 2006
Magnetic memory cell with plural read transistors
ST MICROELECTRONICS SRL160 citations98
US7422926B2Sep 9, 2008
Self-aligned process for manufacturing phase change memory cells
ST MICROELECTRONICS SRL65 citations97
US7110289B1Sep 19, 2006
Method and system for controlling MRAM write current to reduce power consumption
ST MICROELECTRONICS SRL154 citations97
US6567296B1May 20, 2003
Memory device
ST MICROELECTRONICS SRL54 citations94
US7259040B2Aug 21, 2007
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured thereby
ST MICROELECTRONICS SRL40 citations93
US5990526ANov 23, 1999
Memory device with a cell array in triple well, and related manufacturing process
ST MICROELECTRONICS SRL51 citations92
US6734490B2May 11, 2004
Nonvolatile memory cell with high programming efficiency
ST MICROELECTRONICS SRL54 citations91
US7307451B2Dec 11, 2007
Field programmable gate array device
ST MICROELECTRONICS SRL16 citations84
US6537879B2Mar 25, 2003
Process for manufacturing a non-volatile memory cell with a floating gate region autoaligned to the isolation and with a high coupling coefficient
ST MICROELECTRONICS SRL12 citations72
US6294431B1Sep 25, 2001
Process of manufacture of a non-volatile memory with electric continuity of the common source lines
ST MICROELECTRONICS SRL4 citations62
US6071778AJun 6, 2000
Memory device with a memory cell array in triple well, and related manufacturing process
ST MICROELECTRONICS SRL4 citations62
US6750505B2Jun 15, 2004
Non-volatile memory cell with floating gate region autoaligned to the isolation and with a high coupling coefficient
ST MICROELECTRONICS SRL4 citations61
US7606056B2Oct 20, 2009
Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured
ST MICROELECTRONICS SRL6 citations57
US7372166B2May 13, 2008
Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
ST MICROELECTRONICS SRL0 citations52
US7176553B2Feb 13, 2007
Integrated resistive elements with silicidation protection
ST MICROELECTRONICS SRL1 citations52
MICRON TECHNOLOGY INC
7 patentsUS10482954B2Nov 19, 2019
Phase change memory device
MICRON TECHNOLOGY INC4 citations84
US9779805B2Oct 3, 2017
Phase change memory device
MICRON TECHNOLOGY INC5 citations84
US9064565B2Jun 23, 2015
Phase change memory device
MICRON TECHNOLOGY INC6 citations84
US8975148B2Mar 10, 2015
Memory arrays and methods of forming memory cells
MICRON TECHNOLOGY INC8 citations84
US7993957B2Aug 9, 2011
Phase change memory cell and manufacturing method thereof using minitrenches
MICRON TECHNOLOGY INC8 citations83
US8384148B2Feb 26, 2013
Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive coupling
MICRON TECHNOLOGY INC3 citations63
US9773977B2Sep 26, 2017
Phase change memory cells
MICRON TECHNOLOGY INC0 citations49
OVONYX INC
6 patentsUS6972430B2Dec 6, 2005
Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof
OVONYX INC158 citations99
US6891747B2May 10, 2005
Phase change memory cell and manufacturing method thereof using minitrenches
OVONYX INC52 citations95
US7227171B2Jun 5, 2007
Small area contact region, high efficiency phase change memory cell and fabrication method thereof
OVONYX INC43 citations92
US7227765B2Jun 5, 2007
Content addressable memory cell
OVONYX INC19 citations92
US7135756B2Nov 14, 2006
Array of cells including a selection bipolar transistor and fabrication method thereof
OVONYX INC6 citations74
US6974734B2Dec 13, 2005
Process for manufacturing a memory device, in particular a phase change memory, including a silicidation step
OVONYX INC3 citations62
PELLIZZER FABIO
5 patentsUS8546231B2Oct 1, 2013
Memory arrays and methods of forming memory cells
PELLIZZER FABIO21 citations92
US8553453B2Oct 8, 2013
Phase change memory device
PELLIZZER FABIO11 citations84
US8410527B2Apr 2, 2013
Electrical fuse device based on a phase-change memory element and corresponding programming method
PELLIZZER FABIO3 citations63
US7446011B2Nov 4, 2008
Array of cells including a selection bipolar transistor and fabrication method thereof
PELLIZZER FABIO5 citations63
US7875513B2Jan 25, 2011
Self-aligned bipolar junction transistors
PELLIZZER FABIO3 citations62
BEZ ROBERTO
3 patentsUS7772084B2Aug 10, 2010
Process for self-aligned manufacture of integrated electronic devices
BEZ ROBERTO2 citations60
US9876166B2Jan 23, 2018
Phase change memory cell and manufacturing method thereof using minitrenches
BEZ ROBERTO0 citations49
US7468535B2Dec 23, 2008
Self-aligned integrated electronic devices
BEZ ROBERTO0 citations49