Inventor

BAE GEUM-JONG

KR90 patents

Patents

50 patents

US7642140B2Jan 5, 2010

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same

SAMSUNG ELECTRONICS CO LTD135 citations99

US6633066B1Oct 14, 2003

CMOS integrated circuit devices and substrates having unstrained silicon active layers

SAMSUNG ELECTRONICS CO LTD124 citations99

US7183172B2Feb 27, 2007

Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby

SAMSUNG ELECTRONICS CO LTD95 citations98

US6815764B2Nov 9, 2004

Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD71 citations98

US6670677B2Dec 30, 2003

SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon

SAMSUNG ELECTRONICS CO LTD45 citations96

US6448115B1Sep 10, 2002

Semiconductor device having quasi-SOI structure and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD59 citations96

US10243040B1Mar 26, 2019

Semiconductor device

SAMSUNG ELECTRONICS CO LTD38 citations94

US7045424B2May 16, 2006

Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same

SAMSUNG ELECTRONICS CO LTD37 citations93

US6881621B2Apr 19, 2005

Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same

SAMSUNG ELECTRONICS CO LTD19 citations93

US6815320B2Nov 9, 2004

Method for fabricating semiconductor device including gate spacer

SAMSUNG ELECTRONICS CO LTD24 citations93

US6806517B2Oct 19, 2004

Flash memory having local SONOS structure using notched gate and manufacturing method thereof

SAMSUNG ELECTRONICS CO LTD47 citations93

US6794306B2Sep 21, 2004

Semiconductor device having gate all around type transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD16 citations93

US6716689B2Apr 6, 2004

MOS transistor having a T-shaped gate electrode and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD20 citations93

US6657258B2Dec 2, 2003

Semiconductor device having quasi-SOI structure

SAMSUNG ELECTRONICS CO LTD26 citations93

US6605847B2Aug 12, 2003

Semiconductor device having gate all around type transistor and method of forming the same

SAMSUNG ELECTRONICS CO LTD32 citations93

US6524902B2Feb 25, 2003

Method of manufacturing CMOS semiconductor device

SAMSUNG ELECTRONICS CO LTD26 citations93

US7250655B2Jul 31, 2007

MOS transistor having a T-shaped gate electrode

SAMSUNG ELECTRONICS CO LTD38 citations92

US7195987B2Mar 27, 2007

Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein

SAMSUNG ELECTRONICS CO LTD26 citations92

US6914301B2Jul 5, 2005

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same

SAMSUNG ELECTRONICS CO LTD20 citations92

US6881650B2Apr 19, 2005

Method for forming SOI substrate

SAMSUNG ELECTRONICS CO LTD29 citations92

US6696328B2Feb 24, 2004

CMOS gate electrode using selective growth and a fabrication method thereof

SAMSUNG ELECTRONICS CO LTD24 citations92

US6693013B2Feb 17, 2004

Semiconductor transistor using L-shaped spacer and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD29 citations92

US6518645B2Feb 11, 2003

Semiconductor devices with multi-gate structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations84

US10181510B2Jan 15, 2019

Semiconductor device and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD7 citations84

US10128379B2Nov 13, 2018

Semiconductor device having channel regions

SAMSUNG ELECTRONICS CO LTD14 citations84

US10056454B2Aug 21, 2018

Semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD13 citations84

US9825183B2Nov 21, 2017

Semiconductor device including gate electrode extending between nanosheets

SAMSUNG ELECTRONICS CO LTD10 citations84

US7179709B2Feb 20, 2007

Method of fabricating non-volatile memory device having local SONOS gate structure

SAMSUNG ELECTRONICS CO LTD13 citations84

US7045850B2May 16, 2006

Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same

SAMSUNG ELECTRONICS CO LTD14 citations84

US6881645B2Apr 19, 2005

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

SAMSUNG ELECTRONICS CO LTD13 citations84

US6541822B2Apr 1, 2003

Method of manufacturing an SOI type semiconductor that can restrain floating body effect

SAMSUNG ELECTRONICS CO LTD15 citations84

US10566331B1Feb 18, 2020

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD7 citations83

US7184316B2Feb 27, 2007

Non-volatile memory cell array having common drain lines and method of operating the same

SAMSUNG ELECTRONICS CO LTD11 citations83

US7112849B2Sep 26, 2006

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

SAMSUNG ELECTRONICS CO LTD10 citations74

US6998309B2Feb 14, 2006

Method of manufacturing a non-volatile semiconductor memory device

SAMSUNG ELECTRONICS CO LTD8 citations74

US6917085B2Jul 12, 2005

Semiconductor transistor using L-shaped spacer

SAMSUNG ELECTRONICS CO LTD7 citations74

US6750532B2Jun 15, 2004

CMOS semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD9 citations74

US11923362B2Mar 5, 2024

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD1 citations73

US11894379B2Feb 6, 2024

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US11735629B2Aug 22, 2023

Semiconductor devices and methods of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US11676964B2Jun 13, 2023

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD1 citations73

US11444081B2Sep 13, 2022

Integrated circuit (IC) device

SAMSUNG ELECTRONICS CO LTD3 citations73

US11393929B2Jul 19, 2022

Semiconductor devices and manufacturing methods thereof

SAMSUNG ELECTRONICS CO LTD4 citations73

US11367723B2Jun 21, 2022

Semiconductor devices and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD3 citations73

US11309421B2Apr 19, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD2 citations73

Showing the top 50 of 90 patents by PatentIndex Score.

BAE GEUM-JONG

Patents

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same

CMOS integrated circuit devices and substrates having unstrained silicon active layers

Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby

Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same

SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon

Semiconductor device having quasi-SOI structure and manufacturing method thereof

Semiconductor device

Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the same

Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same

Method for fabricating semiconductor device including gate spacer

Flash memory having local SONOS structure using notched gate and manufacturing method thereof

Semiconductor device having gate all around type transistor and method of forming the same

MOS transistor having a T-shaped gate electrode and method for fabricating the same

Semiconductor device having quasi-SOI structure

Semiconductor device having gate all around type transistor and method of forming the same

Method of manufacturing CMOS semiconductor device

MOS transistor having a T-shaped gate electrode

Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein

CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same

Method for forming SOI substrate

CMOS gate electrode using selective growth and a fabrication method thereof

Semiconductor transistor using L-shaped spacer and method of fabricating the same

SOI-type semiconductor device and method of forming the same

Semiconductor device

Integrated circuit (IC) device

Semiconductor devices and manufacturing methods thereof

Semiconductor devices

Semiconductor devices with multi-gate structure and method of manufacturing the same

Semiconductor device and method for fabricating the same

Semiconductor device having channel regions

Semiconductor device and method of manufacturing the same

Semiconductor device including gate electrode extending between nanosheets

Method of fabricating non-volatile memory device having local SONOS gate structure

Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

Method of manufacturing an SOI type semiconductor that can restrain floating body effect

Semiconductor devices

Non-volatile memory cell array having common drain lines and method of operating the same

Method of preventing semiconductor layers from bending and semiconductor device formed thereby

Method of manufacturing a non-volatile semiconductor memory device

Semiconductor transistor using L-shaped spacer

CMOS semiconductor device and method of manufacturing the same

Integrated circuit (IC) device

Semiconductor devices and method of manufacturing the same

Semiconductor devices and methods of manufacturing the same

Integrated circuit (IC) device

Integrated circuit (IC) device

Semiconductor devices and manufacturing methods thereof

Semiconductor devices and method of manufacturing the same

Semiconductor devices