Inventor
HWANG BOR-YUAN C
US3 patents
Patents
3 patentsUS5532175AJul 2, 1996
Method of adjusting a threshold voltage for a semiconductor device fabricated on a semiconductor on insulator substrate
MOTOROLA INC115 citations96
US5719081AFeb 17, 1998
Fabrication method for a semiconductor device on a semiconductor on insulator substrate using a two stage threshold adjust implant
MOTOROLA INC35 citations91
US5405790AApr 11, 1995
Method of forming a semiconductor structure having MOS, bipolar, and varactor devices
MOTOROLA INC51 citations91