Inventor

SOHN DONG KYUN

SG28 patents

⚠️ This page may combine multiple inventors who share the name “SOHN DONG KYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SOHN DONG KYUN

CHARTERED SEMICONDUCTOR MFG

Method for integrating a SONOS gate oxide transistor into a logic/analog integrated circuit having several gate oxide thicknesses

Method for forming high-K charge storage device

Method to fabricate Ge and Si devices together for performance enhancement

Method for SONOS EFLASH integrated circuit

Laser activation of implanted contact plug for memory bitline fabrication

Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch

Selective STI stress relaxation through ion implantation

Implantation-less approach to fabricating strained semiconductor on isolation wafers

Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch

Method of forming ultra thin silicon oxynitride for gate dielectric applications

Method to fabricate variable work function gates for FUSI devices

Process integration scheme of SONOS technology

Semiconductor device and fabrication method

HYUNDAI ELECTRONICS IND

Method for fabricating thin film at high temperature

Method for fabricating polycide dual gate in semiconductor device

Method of forming polycide

Semiconductor device including ternary phase diffusion barrier

GLOBALFOUNDRIES SG PTE LTD

Integrated circuit system employing low-k dielectrics and method of manufacture thereof

Selective stress relaxation of contact etch stop layer through layout design

Selective STI stress relaxation through ion implantation

Reliable memory cell

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices having contacts with intervening spacers and method for fabricating the same

Semiconductor devices including raised source/drain stressors and methods of manufacturing the same

LG SEMICON CO LTD

Method for forming epitaxial Co self-align silicide for semiconductor device

HYUNDAI ELECTRONICS CO LTD

Method for forming dual gate in DRAM embedded with a logic circuit

HYNIX SEMICONDUCTOR INC

Method of forming film for reduced ohmic contact resistance and ternary phase layer amorphous diffusion barrier

SHENG HAIFENG

Integrated circuit system employing alternating conductive layers

NAGARAD SRIPAD SHESHAGIRI

Integrated circuit system including nitride layer technology