P

Inventor

SATO FUMIHIKO

JP78 patents
⚠️ This page may combine multiple inventors who share the name “SATO FUMIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

21 patents
US6049098AApr 11, 2000

Bipolar transistor having an emitter region formed of silicon carbide

NEC CORP153 citations99
US5766999AJun 16, 1998

Method for making self-aligned bipolar transistor

NEC CORP66 citations96
US5599723AFeb 4, 1997

Method for manufacturing bipolar transistor having reduced base-collector parasitic capacitance

NEC CORP70 citations96
US5504018AApr 2, 1996

Process of fabricating bipolar transistor having epitaxially grown base layer without deterioration of transistor characteristics

NEC CORP75 citations96
US5323032AJun 21, 1994

Dual layer epitaxtial base heterojunction bipolar transistor

NEC CORP83 citations96
US5321301AJun 14, 1994

Semiconductor device

NEC CORP68 citations96
US5296391AMar 22, 1994

Method of manufacturing a bipolar transistor having thin base region

NEC CORP64 citations96
US6436781B2Aug 20, 2002

High speed and low parasitic capacitance semiconductor device and method for fabricating the same

NEC CORP22 citations93
US5798561AAug 25, 1998

Bipolar transistor with polysilicon base

NEC CORP33 citations93
US5723378AMar 3, 1998

Fabrication method of semiconductor device using epitaxial growth process

NEC CORP37 citations93
US5698890ADec 16, 1997

Semiconductor device having bipolar transistor free from leakage current across thin base region

NEC CORP41 citations93
US5668396ASep 16, 1997

Bipolar transistor having thin intrinsic base with low base resistance and method for fabricating the same

NEC CORP30 citations93
US5432104AJul 11, 1995

Method for fabricating a vertical bipolar transistor with reduced parasitic capacitance between base and collector regions

NEC CORP47 citations93
US5317205AMay 31, 1994

Semiconductor integrated circuit and associated test method

NEC CORP29 citations93
US5285088AFeb 8, 1994

High electron mobility transistor

NEC CORP31 citations93
US5500554AMar 19, 1996

Bipolar transistor having reduced base-collector capacitance while maintaining improved cut-off frequency

NEC CORP21 citations84
US5840613ANov 24, 1998

Fabrication method for semiconductor device

NEC CORP7 citations74
US5804989ASep 8, 1998

Logic circuit for a semiconductor memory device

NEC CORP14 citations74
US5693979ADec 2, 1997

Semiconductor device

NEC CORP16 citations74
US5238849AAug 24, 1993

Method of fabricating semiconductor device

NEC CORP16 citations74
US4686395AAug 11, 1987

Current switching type logic circuit

NEC CORP7 citations74

SONY INTERACTIVE ENTERTAINMENT INC

9 patents

RICOH KK

3 patents

OMRON TATEISI ELECTRONICS CO

3 patents

JTEKT CORP

2 patents

TOYOTA MOTOR CO LTD

1 patent

ANELVA CORP

1 patent

TOKYO ELECTRIC CO LTD

1 patent

CHUGAI KK

1 patent

NEC ELECTRONICS CORP

1 patent

SEKISUI PLASTICS

1 patent

NIPPON SOKEN

1 patent

SATO FUMIHIKO

1 patent

ASAHI CHEMICAL IND

1 patent

(unassigned)

1 patent

GLOBALFOUNDRIES INC

1 patent

MITSUBISHI ELECTRIC CORP

1 patent

Showing the top 50 of 78 patents by PatentIndex Score.