Inventor
CHO WON-SEOK
KR52 patents
⚠️ This page may combine multiple inventors who share the name “CHO WON-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
33 patentsUS6806180B2Oct 19, 2004
Unitary interconnection structures integral with a dielectric layer
SAMSUNG ELECTRONICS CO LTD52 citations96
US7719033B2May 18, 2010
Semiconductor devices having thin film transistors and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD20 citations92
US7683404B2Mar 23, 2010
Stacked memory and method for forming the same
SAMSUNG ELECTRONICS CO LTD32 citations92
US7602028B2Oct 13, 2009
NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD23 citations92
US7312144B2Dec 25, 2007
Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof
SAMSUNG ELECTRONICS CO LTD24 citations92
US9336884B2May 10, 2016
Non-volatile memory device having vertical structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD4 citations84
US9299716B2Mar 29, 2016
Methods of manufacturing a semiconductor device
SAMSUNG ELECTRONICS CO LTD9 citations84
US7417286B2Aug 26, 2008
Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7387919B2Jun 17, 2008
Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter
SAMSUNG ELECTRONICS CO LTD18 citations84
US7432560B2Oct 7, 2008
Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US7276421B2Oct 2, 2007
Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated thereby
SAMSUNG ELECTRONICS CO LTD9 citations74
US9711188B2Jul 18, 2017
Vertical non-volatile memory device including plural word line stacks
SAMSUNG ELECTRONICS CO LTD4 citations73
US11177274B2Nov 16, 2021
Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
SAMSUNG ELECTRONICS CO LTD0 citations63
US10147739B2Dec 4, 2018
Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
SAMSUNG ELECTRONICS CO LTD1 citations63
US9881934B2Jan 30, 2018
Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device
SAMSUNG ELECTRONICS CO LTD1 citations63
US9564221B2Feb 7, 2017
Non-volatile memory device having vertical structure and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations63
US7554140B2Jun 30, 2009
Nand-type non-volatile memory device
SAMSUNG ELECTRONICS CO LTD3 citations63
US7276404B2Oct 2, 2007
Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patterns
SAMSUNG ELECTRONICS CO LTD3 citations63
US7247528B2Jul 24, 2007
Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques
SAMSUNG ELECTRONICS CO LTD4 citations63
US7193276B2Mar 20, 2007
Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer
SAMSUNG ELECTRONICS CO LTD5 citations63
US7170133B2Jan 30, 2007
Transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US7135746B2Nov 14, 2006
SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the same
SAMSUNG ELECTRONICS CO LTD4 citations63
US8343812B2Jan 1, 2013
Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US8034668B2Oct 11, 2011
Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines
SAMSUNG ELECTRONICS CO LTD3 citations62
US7601998B2Oct 13, 2009
Semiconductor memory device having metallization comprising select lines, bit lines and word lines
SAMSUNG ELECTRONICS CO LTD1 citations62
US7312110B2Dec 25, 2007
Methods of fabricating semiconductor devices having thin film transistors
SAMSUNG ELECTRONICS CO LTD6 citations62
US7405450B2Jul 29, 2008
Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon
SAMSUNG ELECTRONICS CO LTD3 citations61
US11973035B2Apr 30, 2024
Semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US11652056B2May 16, 2023
Semiconductor memory device and electronic system including the same
SAMSUNG ELECTRONICS CO LTD0 citations58
US9966115B2May 8, 2018
Vertical non-volatile memory device and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7709323B2May 4, 2010
Methods of forming nand-type nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD0 citations52
US7563683B2Jul 21, 2009
Transistor and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US7485535B2Feb 3, 2009
Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layer
SAMSUNG ELECTRONICS CO LTD0 citations52
HWANG SUNG-MIN
4 patentsUS9306041B2Apr 5, 2016
Vertical type semiconductor devices
HWANG SUNG-MIN22 citations93
US9087861B2Jul 21, 2015
Methods of manufacturing a semiconductor device
HWANG SUNG-MIN8 citations84
US8879321B2Nov 4, 2014
Vertical non-volatile memory device and electric-electronic system having the same device
HWANG SUNG-MIN9 citations84
US8492831B2Jul 23, 2013
Vertical non-volatile memory device and method of fabricating the same
HWANG SUNG-MIN5 citations84
JEONG JAE-HUN
2 patentsLG ELECTRONICS INC
2 patentsLG ENERGY SOLUTION LTD
2 patentsSAMSUNG DISPLAY CO LTD
2 patentsSHIM JAE-JOO
1 patentMOON HUI-CHANG
1 patentJANG YOUNG-CHUL
1 patentLEE JONG-WOO
1 patentPARK JAE-MORK
1 patentShowing the top 50 of 52 patents by PatentIndex Score.