P

Inventor

CHO WON-SEOK

KR52 patents
⚠️ This page may combine multiple inventors who share the name “CHO WON-SEOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

33 patents
US6806180B2Oct 19, 2004

Unitary interconnection structures integral with a dielectric layer

SAMSUNG ELECTRONICS CO LTD52 citations96
US7719033B2May 18, 2010

Semiconductor devices having thin film transistors and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD20 citations92
US7683404B2Mar 23, 2010

Stacked memory and method for forming the same

SAMSUNG ELECTRONICS CO LTD32 citations92
US7602028B2Oct 13, 2009

NAND flash memory devices having 3-dimensionally arranged memory cells and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD23 citations92
US7312144B2Dec 25, 2007

Unitary interconnection structures integral with a dielectric layer and fabrication methods thereof

SAMSUNG ELECTRONICS CO LTD24 citations92
US9336884B2May 10, 2016

Non-volatile memory device having vertical structure and method of operating the same

SAMSUNG ELECTRONICS CO LTD4 citations84
US9299716B2Mar 29, 2016

Methods of manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD9 citations84
US7417286B2Aug 26, 2008

Semiconductor integrated circuit devices having single crystalline thin film transistors and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US7387919B2Jun 17, 2008

Methods of fabricating a semiconductor device having a node contact structure of a CMOS inverter

SAMSUNG ELECTRONICS CO LTD18 citations84
US7432560B2Oct 7, 2008

Body-tied-to-source MOSFETs with asymmetrical source and drain regions and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US7276421B2Oct 2, 2007

Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated thereby

SAMSUNG ELECTRONICS CO LTD9 citations74
US9711188B2Jul 18, 2017

Vertical non-volatile memory device including plural word line stacks

SAMSUNG ELECTRONICS CO LTD4 citations73
US11177274B2Nov 16, 2021

Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device

SAMSUNG ELECTRONICS CO LTD0 citations63
US10147739B2Dec 4, 2018

Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device

SAMSUNG ELECTRONICS CO LTD1 citations63
US9881934B2Jan 30, 2018

Vertical non-volatile memory device, method of fabricating the same device, and electric-electronic system having the same device

SAMSUNG ELECTRONICS CO LTD1 citations63
US9564221B2Feb 7, 2017

Non-volatile memory device having vertical structure and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations63
US7554140B2Jun 30, 2009

Nand-type non-volatile memory device

SAMSUNG ELECTRONICS CO LTD3 citations63
US7276404B2Oct 2, 2007

Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patterns

SAMSUNG ELECTRONICS CO LTD3 citations63
US7247528B2Jul 24, 2007

Methods of fabricating semiconductor integrated circuits using selective epitaxial growth and partial planarization techniques

SAMSUNG ELECTRONICS CO LTD4 citations63
US7193276B2Mar 20, 2007

Semiconductor devices with a source/drain regions formed on a recessed portion of an isolation layer

SAMSUNG ELECTRONICS CO LTD5 citations63
US7170133B2Jan 30, 2007

Transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US7135746B2Nov 14, 2006

SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the same

SAMSUNG ELECTRONICS CO LTD4 citations63
US8343812B2Jan 1, 2013

Contact structures in substrate having bonded interface, semiconductor device including the same, methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD4 citations62
US8034668B2Oct 11, 2011

Method for forming semiconductor device having metallization comprising select lines, bit lines and word lines

SAMSUNG ELECTRONICS CO LTD3 citations62
US7601998B2Oct 13, 2009

Semiconductor memory device having metallization comprising select lines, bit lines and word lines

SAMSUNG ELECTRONICS CO LTD1 citations62
US7312110B2Dec 25, 2007

Methods of fabricating semiconductor devices having thin film transistors

SAMSUNG ELECTRONICS CO LTD6 citations62
US7405450B2Jul 29, 2008

Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon

SAMSUNG ELECTRONICS CO LTD3 citations61
US11973035B2Apr 30, 2024

Semiconductor memory device and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations58
US11652056B2May 16, 2023

Semiconductor memory device and electronic system including the same

SAMSUNG ELECTRONICS CO LTD0 citations58
US9966115B2May 8, 2018

Vertical non-volatile memory device and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7709323B2May 4, 2010

Methods of forming nand-type nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD0 citations52
US7563683B2Jul 21, 2009

Transistor and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD0 citations52
US7485535B2Feb 3, 2009

Methods of fabricating semiconductor devices with a source/drain formed on a recessed portion of an isolation layer

SAMSUNG ELECTRONICS CO LTD0 citations52

HWANG SUNG-MIN

4 patents

JEONG JAE-HUN

2 patents

LG ELECTRONICS INC

2 patents

LG ENERGY SOLUTION LTD

2 patents

SAMSUNG DISPLAY CO LTD

2 patents

SHIM JAE-JOO

1 patent

MOON HUI-CHANG

1 patent

JANG YOUNG-CHUL

1 patent

LEE JONG-WOO

1 patent

PARK JAE-MORK

1 patent

Showing the top 50 of 52 patents by PatentIndex Score.