Inventor
STRECK CHRISTOF
DE23 patents
⚠️ This page may combine multiple inventors who share the name “STRECK CHRISTOF”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
10 patentsUS6066574AMay 23, 2000
Hot plate cure process for BCB low k interlevel dielectric
ADVANCED MICRO DEVICES INC75 citations96
US6317642B1Nov 13, 2001
Apparatus and methods for uniform scan dispensing of spin-on materials
ADVANCED MICRO DEVICES INC32 citations92
US6746927B2Jun 8, 2004
Semiconductor device having a polysilicon line structure with increased metal silicide portions and method for forming the polysilicon line structure of a semiconductor device
ADVANCED MICRO DEVICES INC15 citations84
US6927161B2Aug 9, 2005
Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique
ADVANCED MICRO DEVICES INC8 citations71
US7413985B2Aug 19, 2008
Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure device
ADVANCED MICRO DEVICES INC6 citations62
US7544551B2Jun 9, 2009
Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radius
ADVANCED MICRO DEVICES INC3 citations60
US7307026B2Dec 11, 2007
Method of forming an epitaxial layer for raised drain and source regions by removing contaminations
ADVANCED MICRO DEVICES INC2 citations59
US7384877B2Jun 10, 2008
Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation
ADVANCED MICRO DEVICES INC0 citations51
US7687398B2Mar 30, 2010
Technique for forming nickel silicide by depositing nickel from a gaseous precursor
ADVANCED MICRO DEVICES INC0 citations50
US7595269B2Sep 29, 2009
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
ADVANCED MICRO DEVICES INC0 citations50
GLOBALFOUNDRIES INC
4 patentsUS7829460B2Nov 9, 2010
Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
GLOBALFOUNDRIES INC467 citations98
US8384217B2Feb 26, 2013
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
GLOBALFOUNDRIES INC4 citations62
US7638428B2Dec 29, 2009
Semiconductor structure and method of forming the same
GLOBALFOUNDRIES INC6 citations62
US9443723B2Sep 13, 2016
Integrated circuits with an insultating layer and methods for producing such integrated circuits
GLOBALFOUNDRIES INC0 citations29
STRECK CHRISTOF
4 patentsUS8222135B2Jul 17, 2012
Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitride
STRECK CHRISTOF6 citations82
US8105943B2Jan 31, 2012
Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniques
STRECK CHRISTOF3 citations61
US8124532B2Feb 28, 2012
Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layer
STRECK CHRISTOF0 citations49
US8609555B2Dec 17, 2013
Increased stability of a complex material stack in a semiconductor device by providing fluorine enriched interfaces
STRECK CHRISTOF0 citations44
KAHLERT VOLKER
2 patentsUS8432035B2Apr 30, 2013
Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
KAHLERT VOLKER5 citations71
US8084354B2Dec 27, 2011
Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devices
KAHLERT VOLKER5 citations71