Inventor
HUANG MING-JIE
TW29 patents
⚠️ This page may combine multiple inventors who share the name “HUANG MING-JIE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
11 patentsUS9214358B1Dec 15, 2015
Equal gate height control method for semiconductor device with different pattern densites
TAIWAN SEMICONDUCTOR MFG43 citations98
US6828205B2Dec 7, 2004
Method using wet etching to trim a critical dimension
TAIWAN SEMICONDUCTOR MFG24 citations93
US6794230B2Sep 21, 2004
Approach to improve line end shortening
TAIWAN SEMICONDUCTOR MFG22 citations92
US8900957B2Dec 2, 2014
Method of dual epi process for semiconductor device
TAIWAN SEMICONDUCTOR MFG7 citations84
US8900956B2Dec 2, 2014
Method of dual EPI process for semiconductor device
TAIWAN SEMICONDUCTOR MFG5 citations84
US8048764B2Nov 1, 2011
Dual etch method of defining active area in semiconductor device
TAIWAN SEMICONDUCTOR MFG11 citations84
US7008866B2Mar 7, 2006
Large-scale trimming for ultra-narrow gates
TAIWAN SEMICONDUCTOR MFG11 citations83
US7115450B2Oct 3, 2006
Approach to improve line end shortening including simultaneous trimming of photosensitive layer and hardmask
TAIWAN SEMICONDUCTOR MFG5 citations74
US7060628B2Jun 13, 2006
Method for fabricating a hard mask polysilicon gate
TAIWAN SEMICONDUCTOR MFG2 citations63
US7141460B2Nov 28, 2006
Method of forming trenches in a substrate by etching and trimming both hard mask and a photosensitive layers
TAIWAN SEMICONDUCTOR MFG0 citations52
US8835242B2Sep 16, 2014
Semiconductor structure and method
TAIWAN SEMICONDUCTOR MFG1 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
9 patentsUS9917085B2Mar 13, 2018
Metal gate isolation structure and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD18 citations94
US10134604B1Nov 20, 2018
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US9412666B2Aug 9, 2016
Equal gate height control method for semiconductor device with different pattern densites
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US10186511B2Jan 22, 2019
Metal gate isolation structure and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9543210B2Jan 10, 2017
Forming crown active regions for FinFETs
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US11316030B2Apr 26, 2022
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12336235B2Jun 17, 2025
Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US11616133B2Mar 28, 2023
Fin field-effect transistor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10867807B2Dec 15, 2020
Semiconductor device and method
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52