P

Inventor

HUANG YIMIN

TW98 patents
⚠️ This page may combine multiple inventors who share the name “HUANG YIMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

29 patents
US6268283B1Jul 31, 2001

Method for forming dual damascene structure

UNITED MICROELECTRONICS CORP58 citations96
US6265780B1Jul 24, 2001

Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit

UNITED MICROELECTRONICS CORP65 citations96
US6265313B1Jul 24, 2001

Method of manufacturing copper interconnect

UNITED MICROELECTRONICS CORP59 citations96
US5990015ANov 23, 1999

Dual damascence process

UNITED MICROELECTRONICS CORP60 citations96
US6339025B1Jan 15, 2002

Method of fabricating a copper capping layer

UNITED MICROELECTRONICS CORP33 citations93
US6214745B1Apr 10, 2001

Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern

UNITED MICROELECTRONICS CORP21 citations93
US6211068B1Apr 3, 2001

Dual damascene process for manufacturing interconnects

UNITED MICROELECTRONICS CORP39 citations93
US6191028B1Feb 20, 2001

Method of patterning dielectric

UNITED MICROELECTRONICS CORP30 citations93
US6159661ADec 12, 2000

Dual damascene process

UNITED MICROELECTRONICS CORP33 citations93
US6156640ADec 5, 2000

Damascene process with anti-reflection coating

UNITED MICROELECTRONICS CORP45 citations93
US6156648ADec 5, 2000

Method for fabricating dual damascene

UNITED MICROELECTRONICS CORP33 citations93
US6150073ANov 21, 2000

Degradation-free low-permittivity dielectrics patterning process for damascene

UNITED MICROELECTRONICS CORP30 citations93
US6084304AJul 4, 2000

Structure of metallization

UNITED MICROELECTRONICS CORP25 citations93
US6077769AJun 20, 2000

Method of fabricating a daul damascene structure

UNITED MICROELECTRONICS CORP46 citations93
US6069066AMay 30, 2000

Method of forming bonding pad

UNITED MICROELECTRONICS CORP23 citations93
US6060379AMay 9, 2000

Method of forming dual damascene structure

UNITED MICROELECTRONICS CORP19 citations93
US6027994AFeb 22, 2000

Method to fabricate a dual metal-damascene structure in a substrate

UNITED MICROELECTRONICS CORP28 citations93
US6025264AFeb 15, 2000

Fabricating method of a barrier layer

UNITED MICROELECTRONICS CORP32 citations93
US6001733ADec 14, 1999

Method of forming a dual damascene with dummy metal lines

UNITED MICROELECTRONICS CORP54 citations93
US6297561B1Oct 2, 2001

Semiconductor chip

UNITED MICROELECTRONICS CORP25 citations92
US6251694B1Jun 26, 2001

Method of testing and packaging a semiconductor chip

UNITED MICROELECTRONICS CORP34 citations92
US6001414ADec 14, 1999

Dual damascene processing method

UNITED MICROELECTRONICS CORP34 citations92
US6680248B2Jan 20, 2004

Method of forming dual damascene structure

UNITED MICROELECTRONICS CORP14 citations84
US6593223B1Jul 15, 2003

Method of forming dual damascene structure

UNITED MICROELECTRONICS CORP13 citations84
US5981395ANov 9, 1999

Method of fabricating an unlanded metal via of multi-level interconnection

UNITED MICROELECTRONICS CORP19 citations84
US6617234B2Sep 9, 2003

Method of forming metal fuse and bonding pad

UNITED MICROELECTRONICS CORP13 citations83
US6794752B2Sep 21, 2004

Bonding pad structure

UNITED MICROELECTRONICS CORP8 citations74
US6048796AApr 11, 2000

Method of manufacturing multilevel metal interconnect

UNITED MICROELECTRONICS CORP12 citations74
US5959361ASep 28, 1999

Dielectric pattern

UNITED MICROELECTRONICS CORP11 citations74

TAIWAN SEMICONDUCTOR MFG CO LTD

12 patents
US11075242B2Jul 27, 2021

Semiconductor devices for image sensing

TAIWAN SEMICONDUCTOR MFG CO LTD14 citations85
US10854647B2Dec 1, 2020

Photo diode with dual backside deep trench isolation depth

TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10177187B2Jan 8, 2019

Implant damage free image sensor and method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10991746B2Apr 27, 2021

High performance image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11088196B2Aug 10, 2021

Metal reflector grounding for noise reduction in light detector

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797091B2Oct 6, 2020

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10692914B2Jun 23, 2020

Implant damage free image sensor and method of the same

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9818788B2Nov 14, 2017

Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9515116B1Dec 6, 2016

Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11670663B2Jun 6, 2023

High performance image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12557403B2Feb 17, 2026

High density image sensor

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040336B2Jul 16, 2024

Semiconductor imaging device having improved dark current performance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63

LIN YUN JING

1 patent

LIN YU-HSIEN

1 patent

CYNTEC CO LTD

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent

NIEH CHUN-FENG

1 patent

GEN ELECTRIC

1 patent

FAN WEI-HAN

1 patent

HUANG YIMIN

1 patent

WANG PAI CHIEH

1 patent

Showing the top 50 of 98 patents by PatentIndex Score.