Inventor
HUANG YIMIN
TW98 patents
⚠️ This page may combine multiple inventors who share the name “HUANG YIMIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
29 patentsUS6268283B1Jul 31, 2001
Method for forming dual damascene structure
UNITED MICROELECTRONICS CORP58 citations96
US6265780B1Jul 24, 2001
Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuit
UNITED MICROELECTRONICS CORP65 citations96
US6265313B1Jul 24, 2001
Method of manufacturing copper interconnect
UNITED MICROELECTRONICS CORP59 citations96
US5990015ANov 23, 1999
Dual damascence process
UNITED MICROELECTRONICS CORP60 citations96
US6339025B1Jan 15, 2002
Method of fabricating a copper capping layer
UNITED MICROELECTRONICS CORP33 citations93
US6214745B1Apr 10, 2001
Method of improving surface planarity of chemical-mechanical polishing operation by forming shallow dummy pattern
UNITED MICROELECTRONICS CORP21 citations93
US6211068B1Apr 3, 2001
Dual damascene process for manufacturing interconnects
UNITED MICROELECTRONICS CORP39 citations93
US6191028B1Feb 20, 2001
Method of patterning dielectric
UNITED MICROELECTRONICS CORP30 citations93
US6159661ADec 12, 2000
Dual damascene process
UNITED MICROELECTRONICS CORP33 citations93
US6156640ADec 5, 2000
Damascene process with anti-reflection coating
UNITED MICROELECTRONICS CORP45 citations93
US6156648ADec 5, 2000
Method for fabricating dual damascene
UNITED MICROELECTRONICS CORP33 citations93
US6150073ANov 21, 2000
Degradation-free low-permittivity dielectrics patterning process for damascene
UNITED MICROELECTRONICS CORP30 citations93
US6084304AJul 4, 2000
Structure of metallization
UNITED MICROELECTRONICS CORP25 citations93
US6077769AJun 20, 2000
Method of fabricating a daul damascene structure
UNITED MICROELECTRONICS CORP46 citations93
US6069066AMay 30, 2000
Method of forming bonding pad
UNITED MICROELECTRONICS CORP23 citations93
US6060379AMay 9, 2000
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP19 citations93
US6027994AFeb 22, 2000
Method to fabricate a dual metal-damascene structure in a substrate
UNITED MICROELECTRONICS CORP28 citations93
US6025264AFeb 15, 2000
Fabricating method of a barrier layer
UNITED MICROELECTRONICS CORP32 citations93
US6001733ADec 14, 1999
Method of forming a dual damascene with dummy metal lines
UNITED MICROELECTRONICS CORP54 citations93
US6297561B1Oct 2, 2001
Semiconductor chip
UNITED MICROELECTRONICS CORP25 citations92
US6251694B1Jun 26, 2001
Method of testing and packaging a semiconductor chip
UNITED MICROELECTRONICS CORP34 citations92
US6001414ADec 14, 1999
Dual damascene processing method
UNITED MICROELECTRONICS CORP34 citations92
US6680248B2Jan 20, 2004
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP14 citations84
US6593223B1Jul 15, 2003
Method of forming dual damascene structure
UNITED MICROELECTRONICS CORP13 citations84
US5981395ANov 9, 1999
Method of fabricating an unlanded metal via of multi-level interconnection
UNITED MICROELECTRONICS CORP19 citations84
US6617234B2Sep 9, 2003
Method of forming metal fuse and bonding pad
UNITED MICROELECTRONICS CORP13 citations83
US6794752B2Sep 21, 2004
Bonding pad structure
UNITED MICROELECTRONICS CORP8 citations74
US6048796AApr 11, 2000
Method of manufacturing multilevel metal interconnect
UNITED MICROELECTRONICS CORP12 citations74
US5959361ASep 28, 1999
Dielectric pattern
UNITED MICROELECTRONICS CORP11 citations74
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS11075242B2Jul 27, 2021
Semiconductor devices for image sensing
TAIWAN SEMICONDUCTOR MFG CO LTD14 citations85
US10854647B2Dec 1, 2020
Photo diode with dual backside deep trench isolation depth
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US10177187B2Jan 8, 2019
Implant damage free image sensor and method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10991746B2Apr 27, 2021
High performance image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations83
US11088196B2Aug 10, 2021
Metal reflector grounding for noise reduction in light detector
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10797091B2Oct 6, 2020
Semiconductor imaging device having improved dark current performance
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10692914B2Jun 23, 2020
Implant damage free image sensor and method of the same
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US9818788B2Nov 14, 2017
Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9515116B1Dec 6, 2016
Vertical transfer gate structure for a back-side illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensor using global shutter capture
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11670663B2Jun 6, 2023
High performance image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US12557403B2Feb 17, 2026
High density image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12040336B2Jul 16, 2024
Semiconductor imaging device having improved dark current performance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
LIN YUN JING
1 patentLIN YU-HSIEN
1 patentCYNTEC CO LTD
1 patentTAIWAN SEMICONDUCTOR MFG
1 patentNIEH CHUN-FENG
1 patentGEN ELECTRIC
1 patentFAN WEI-HAN
1 patentHUANG YIMIN
1 patentWANG PAI CHIEH
1 patentShowing the top 50 of 98 patents by PatentIndex Score.