Inventor
ABATCHEV MIRZAFER K
US36 patents
⚠️ This page may combine multiple inventors who share the name “ABATCHEV MIRZAFER K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
22 patentsUS7910288B2Mar 22, 2011
Mask material conversion
MICRON TECHNOLOGY INC555 citations99
US7611980B2Nov 3, 2009
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
MICRON TECHNOLOGY INC757 citations99
US7115525B2Oct 3, 2006
Method for integrated circuit fabrication using pitch multiplication
MICRON TECHNOLOGY INC517 citations99
US7253118B2Aug 7, 2007
Pitch reduced patterns relative to photolithography features
MICRON TECHNOLOGY INC161 citations98
US7687408B2Mar 30, 2010
Method for integrated circuit fabrication using pitch multiplication
MICRON TECHNOLOGY INC42 citations96
US7651951B2Jan 26, 2010
Pitch reduced patterns relative to photolithography features
MICRON TECHNOLOGY INC46 citations96
US7547640B2Jun 16, 2009
Method for integrated circuit fabrication using pitch multiplication
MICRON TECHNOLOGY INC49 citations96
US8883644B2Nov 11, 2014
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
MICRON TECHNOLOGY INC15 citations93
US7629693B2Dec 8, 2009
Method for integrated circuit fabrication using pitch multiplication
MICRON TECHNOLOGY INC20 citations93
US7271106B2Sep 18, 2007
Critical dimension control for integrated circuits
MICRON TECHNOLOGY INC17 citations92
US10607844B2Mar 31, 2020
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC4 citations84
US10096483B2Oct 9, 2018
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC6 citations84
US9761457B2Sep 12, 2017
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC7 citations84
US9478497B2Oct 25, 2016
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
MICRON TECHNOLOGY INC11 citations84
US7910483B2Mar 22, 2011
Trim process for critical dimension control for integrated circuits
MICRON TECHNOLOGY INC7 citations83
US7662718B2Feb 16, 2010
Trim process for critical dimension control for integrated circuits
MICRON TECHNOLOGY INC14 citations83
US7563723B2Jul 21, 2009
Critical dimension control for integrated circuits
MICRON TECHNOLOGY INC11 citations83
US9305782B2Apr 5, 2016
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC3 citations82
US7112533B2Sep 26, 2006
Plasma etching system and method
MICRON TECHNOLOGY INC6 citations72
US11335563B2May 17, 2022
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC0 citations62
US8895232B2Nov 25, 2014
Mask material conversion
MICRON TECHNOLOGY INC0 citations52
US7507672B1Mar 24, 2009
Plasma etching system and method
MICRON TECHNOLOGY INC1 citations51
TRAN LUAN
3 patentsUS8598632B2Dec 3, 2013
Integrated circuit having pitch reduced patterns relative to photoithography features
TRAN LUAN10 citations92
US8207576B2Jun 26, 2012
Pitch reduced patterns relative to photolithography features
TRAN LUAN18 citations92
US8119535B2Feb 21, 2012
Pitch reduced patterns relative to photolithography features
TRAN LUAN8 citations83
ROUND ROCK RES LLC
2 patentsABATCHEV MIRZAFER K
2 patentsLAM RES CORP
2 patentsLODESTAR LICENSING GROUP LLC
2 patentsUS12463044B2Nov 4, 2025
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62
US11935756B2Mar 19, 2024
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62